Owing to advances in fabrication technology and device design, semiconductor optical amplifiers (SOAs) are evolving as a promising candidate for future optical coherent communication links. This review article focuses on the fundamentals and broad applications of SOAs, specifically for optical channels with advanced modulation formats, as an integrable broadband amplifier in commercial transponders and as a nonlinear medium for optical signal processing. We discuss the basic functioning of an SOA and distortions of coherent signals when SOAs are used as amplifiers. We first focus on the techniques used for low-distortion amplification of phase-modulated signals using SOAs. Then we discuss optical signal processing techniques enabled by SOAs with an emphasis on all-optical wavelength conversion, optical phase conjugation, and phase quantization of coherent optical signals. 

Semiconductor optical amplifiers: recent advances and applications

We report a demonstration of the hallmark concept of quantum optics: periodic collapse and revival of quantum coherence (QCR) in a room temperature ensemble of quantum dots (QD). Control over quantum states, inherent to QCR, together with the dynamical QD properties present an opportunity for practical room temperature building blocks of quantum information processing. The amplitude decay of QCR is dictated by the QD homogeneous linewidth, thus, enabling its extraction in a double-pulse Ramsey-type experiment. The more common photon echo technique was also invoked and yielded the same linewidth. Measured electrical bias and temperature dependencies of the transverse relaxation times enable to determine the two main decoherence mechanisms: carrier-carrier and carrier-phonon scatterings.

Room Temperature Quantum Coherent Revival in an Ensemble of Artificial Atoms

We demonstrate the hallmark concept of periodic collapse and revival of coherence in a room-temperature ensemble of quantum dots (QDs) in the form of a 1.5-mm-long optical amplifier. Femtosecond excitation pulses induce coherent interactions with a number of discrete homogeneous QD subgroups within an inhomogeneously broadened ensemble, which interfere constructively to induce coherent revival (CR). The amplitude decay of CR is dictated by the QD homogeneous linewidth, thus enabling its extraction in a double-pulse Ramsey-type experiment. The more common photon echo technique is also invoked and yields the same linewidth provided that both experiments use the same bias. A dephasing time ${T}_{2}$ longer than 5 ps is extracted. This is a record long ${T}_{2}$ for a room-temperature QD ensemble and testifies to the high quality of the InAs/InP QDs used in the experiments. Measured electrical bias and temperature dependencies of the transverse relaxation times (${T}_{2}$ and ${T}_{2}^{*}$) enable the determination of the two main decoherence mechanisms: carrier-carrier and carrier-phonon scatterings.

https://link.aps.org/pdf/10.1103/PhysRevResearch.3.033073

Room-temperature coherent revival in an ensemble of quantum dots

We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by molecular beam epitaxy on a digitally alloyed InGaAs metamorphic buffer layer (MBL) with gradual composition ensuring a redshift of the QD emission up to the second telecom window. Based on the photoluminescence (PL) measurements and numerical calculations, we analyzed the factors influencing the energies of optical transitions in QDs, among which the QD height seems to be dominating. In addition, polarization anisotropy of the QD emission was observed, which is a fingerprint of significant valence states mixing enhanced by the QD confinement potential asymmetry, driven by the decreased strain with increasing In content in the MBL. The barrier-related transitions were probed by photoreflectance, which combined with photoluminescence data and the PL temperature dependence, allowed for the determination of the carrier activation energies and the main channels of carrier loss, identified as the carrier escape to the MBL barrier. Eventually, the zero-dimensional character of the emission was confirmed by detecting the photoluminescence from single QDs with identified features of the confined neutral exciton and biexciton complexes via the excitation power and polarization dependences.

/pdf/electronic-and-optical-properties-of-inas-qds-grown-by-mbe-2bj2dyso.pdf

Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer

Tuning GaAs-based quantum emitters to telecom wavelengths makes it possible to use the existing mature technology for applications in, e.g., long-haul ultra-secure communication in the fiber networks. A promising method re-developed recently is to use a metamorphic InGaAs buffer that redshifts the emission by reducing strain. However, the impact of such a buffer causes also a simultaneous modification of other quantum dot properties. Knowledge of these effects is crucial for actual implementations of QD-based non-classical light sources for quantum communication schemes. Here, we thoroughly study single GaAs-based quantum dots grown by molecular-beam epitaxy on specially designed, digital-alloy InGaAs metamorphic buffers. With a set of structures varying in the buffer indium content and providing quantum dot emission through the telecom spectral range up to 1.6 $\mu$m, we analyze the impact of the buffer and its composition on QD structural and optical properties. We identify the mechanisms of quantum dot emission shift with varying buffer composition. We also look into the charge trapping processes and compare excitonic properties for different growth conditions with single-dot emission successfully shifted to both, the second and the third telecom windows.

InGaAs metamorphic buffers grown by MBE on GaAs affect the excitonic and optical properties of single InAs quantum dots while tuning their single photon emission to the telecom range

Using quantum dot (QD) structures as active material for optoelectronics was already in focus before the development of quantum well (QW) lasers and before semiconductor lasers occupied an important place in the market. The big step in reducing laser threshold conditions by substituting bulk gain materials with QWs should find a logical continuation by further reducing the dimensionality toward full 3D carrier confinement by QDs. This was predicted by theoretical considerations at the beginning of the 1980s [1], [2]. However, no practical technologies were available at that time. Top-down approaches, as originally addressed, to produce nanoscale species on very large surfaces and interface areas resulted in the accumulation of a large defect density within the active region and the domination of nonradiative carrier recombination mechanisms. Only during the early 1990s was a major breakthrough achieved with the introduction of the bottom-up approach of strain-driven, self-organized epitaxial QD growth. The first lasers were obtained in the gallium arsenide (GaAs)-based material system [3].

Tali Septon

Papers

1.5-mm Indium Phosphide-Based Quantum Dot Lasers and Optical Amplifiers: The Impact of Atom-Like Optical Gain Material for Optoelectronics Devices