Taro Nagahama

TL;DR: A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second nonmagnetic layer placed between the first and the second magnetoresists; and a second interfacial magnetic layer between the second and the nonmagians as mentioned in this paper.

TL;DR: In this paper, a magnetoresistive effect element includes a first magnetic layer including perpendicular magnetic anisotropy to a film surface and an invariable magnetization direction, the second magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element from a second group including Co and Fe, and a non-magnetic layer between the first and second magnetic layers.

TL;DR: In this article, the authors proposed a spin-implantation writing magnetic resistance element, which is thermally stable and which can be reversed in magnetization with a low current.

TL;DR: In this paper, the authors proposed a flattened tunnel magnetoresistance element with high alignment and a flat interface without being influenced by the structure and irregularities of a ground such as an amorphous substance and a polycrystalline substance.

TL;DR: In this paper, the authors proposed a method to provide a ferromagnetic tunnel magnetoresistive element of higher magnetoregressive effect by merely changing a film thickness to raise a spin polarization degree, with out changing the chemical composition of an existing material which is superior in magnetic characteristics.