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Shinji Yuasa
Researcher at National Institute of Advanced Industrial Science and Technology
Publications - 531
Citations - 22870
Shinji Yuasa is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: Tunnel magnetoresistance & Magnetoresistance. The author has an hindex of 63, co-authored 509 publications receiving 20117 citations. Previous affiliations of Shinji Yuasa include Hitachi & Keio University.
Papers
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Journal ArticleDOI
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
TL;DR: A giant MR ratio up to 180% at room temperature in single-crystal Fe/MgO/Fe MTJs is reported, indicating that coherency of wave functions is conserved across the tunnel barrier.
Journal ArticleDOI
230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions
David D. Djayaprawira,K. Tsunekawa,Motonobu Nagai,H. Maehara,Shinji Yamagata,Naoki Watanabe,Shinji Yuasa,Koji Ando +7 more
TL;DR: The magnetoresistance ratio of 230% at room temperature is reported in spin-valve type magnetic tunnel junctions using MgO barrier layer and amorphous CoFeB ferromagnetic electrodes fabricated on thermally oxidized Si substrates.
Journal ArticleDOI
Neuromorphic computing with nanoscale spintronic oscillators
Jacob Torrejon,Mathieu Riou,Flavio Abreu Araujo,Sumito Tsunegi,Guru Khalsa,Damien Querlioz,P. Bortolotti,Vincent Cros,Kay Yakushiji,Akio Fukushima,Hitoshi Kubota,Shinji Yuasa,Mark D. Stiles,Julie Grollier +13 more
TL;DR: In this article, a magnetic tunnel junction (MTJ) was used to achieve spoken-digit recognition with an accuracy similar to that of state-of-the-art neural networks.
Journal ArticleDOI
Spin-torque diode effect in magnetic tunnel junctions
Ashwin Tulapurkar,Ashwin Tulapurkar,Yoshishige Suzuki,Yoshishige Suzuki,Akio Fukushima,Hitoshi Kubota,H. Maehara,K. Tsunekawa,David D. Djayaprawira,Naoki Watanabe,Shinji Yuasa +10 more
TL;DR: In this paper, it was shown that the application of a small radio-frequency alternating current to a nanometre-scale magnetic tunnel junction can generate a measurable direct current (d.c.) voltage across the device when the frequency is resonant with the spin oscillations that arise from the spin-torque effect.
Patent
Magnetoresistive element and magnetic memory
Tadaomi Daibou,Junichi Ito,Tadashi Kai,Minoru Amano,H. Yoda,Terunobu Miyazaki,Shigemi Mizukami,K. Ando,Kay Yakushiji,Shinji Yuasa,Hitoshi Kubota,Akio Fukushima,Taro Nagahama,Takahide Kubota +13 more
TL;DR: A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second nonmagnetic layer placed between the first and the second magnetoresists; and a second interfacial magnetic layer between the second and the nonmagians as mentioned in this paper.