Showing papers by "Tetsu Tanaka published in 2000"
01 Dec 2000
TL;DR: In this paper, the effect of pocket (halo) profile on V/sub th/ fluctuation due to statistical dopant variation by measurement and simulation was studied and it was shown that a pocket profile significantly enhances V sub th / fluctuation by a factor of >15% at worst even if the implantation process variations would be negligible.
Abstract: This paper studies effect of pocket (halo) profile on V/sub th/ fluctuation due to statistical dopant variation by measurement and simulation. A pocket profile significantly enhances V/sub th/ fluctuation by a factor of >15% at worst even if the implantation process variations would be negligible. This is because pocket dopants shrink the area which controls V/sub th/.
40 citations
13 Jun 2000
TL;DR: In this paper, a local fluctuation of channel impurity on the source edge is studied and a direct measurement successfully separates the local (intra-FET) and global (inter FET) factors.
Abstract: This paper studies a local fluctuation of channel impurity on the source edge. Our direct measurement successfully separates the local (intra-FET) and global (inter-FET) factors. The quite local region (/spl Lt/L/sub eff//spl times/W/sub eff/) significantly affects V/sub th/ distribution in a high V/sub d/, which exceeds the global factor in the smallest MOSFETs. The local fluctuation inevitably affects MOSFETs in SRAM cells even though global fluctuation is reduced by process optimization.
18 citations