Disclosed is an acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and an alternating frame region. The first electrode is adjacent the substrate, and the first electrode has an outer perimeter. The piezoelectric layer is adjacent the first electrode. The second electrode is adjacent the piezoelectric layer and the second electrode has an outer perimeter. The alternating frame region is on one of the first and second electrodes.

Acoustic resonator performance enhancement using alternating frame structure

Film bulk acoustic resonators (FBARs) stacked FBARs (SBARS) including at least two curved edges are disclosed.

Piezoelectric resonator structures and electrical filters

Film bulk acoustic resonators (FBARs) having frame elements and filters including the resonators are described.

Piezoelectric resonator structures and electrical filters having frame elements

An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator.

Acoustic resonator structure comprising a bridge

An acoustic resonator comprises a first electrode and second electrode comprising a plurality of sides. At least one of the sides of the second electrode comprises a cantilevered portion. A piezoelectric layer is disposed between the first and second electrodes. An electrical filter comprises an acoustic resonator.

Acoustic resonator structure having an electrode with a cantilevered portion

A component operating with bulk acoustic waves has a carrier substrate, a thin-film resonator and an acoustic mirror arranged between the resonator and carrier substrate The acoustic mirror is formed by at least one high acoustic impedance layer, which is covered by a low acoustic impedance layer and the uppermost low impedance acoustic layer is planarized to form a flat planar surface on which the thin-film resonator is formed

Component operating with bulk acoustic waves and a method for producing the component

A spherical microphone array is used to detect and localize sound sources in terms of model-based machine learning (ML). In this application, it is crucial to establish parametric models to distinguish background sound environment from presence of sound sources. In the presence of sound sources, the parameter models are also used to localize an unknown number of potentially multiple sound sources. In this work, a model-based Bayesian learning framework is presented for localizing an unknown number of sound sources. Among them, a no-source scenario needs to be accounted for. The model-based machine learning applies the model comparison between the no-source model and the one-source model for sound source detection. After detecting sound sources, the machine learning needs to involve sound source enumeration and localization in order to correctly localize potential multiple sound sources. Specifically, sound environment is analyzed using Bayesian model comparison of two different models accounting for absence and presence of the sound sources for source detection. Upon a positive detection, potentially multiple source models are involved to analyze direction of arrivals (DoAs) for far-field and to localize sound sources for near-field including source distances, amplitudes, and DoAs using Bayesian model selection and parameter estimation.

Prediction model formulations for detection, enumeration, and localization of multiple sound sources using spherical harmonics

A sound wave actuated acoustic component comprises electrodes (E1,2) sandwiching a piezoelectric layer (PS) on a carrier substrate (TS) and an acoustic mirror of alternating layers of high and low acoustic impedance (HZ,LZ). An upper layer (LZ1) surrounds a structured layer (HZ1) and is planar with the lower electrode (E1). An Independent claim is also included for a production process for the above.

Sound wave activated component such as bulk acoustic wave resonator for mobile telecommunication filter, has piezoelectric and high and low acoustic impedance layers

Thomas Metzger

Papers

Component operating with bulk acoustic waves and a method for producing the component

Prediction model formulations for detection, enumeration, and localization of multiple sound sources using spherical harmonics

Sound wave activated component such as bulk acoustic wave resonator for mobile telecommunication filter, has piezoelectric and high and low acoustic impedance layers