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Component operating with bulk acoustic waves and a method for producing the component
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TLDR
In this article, a component operating with bulk acoustic waves has a carrier substrate, a thin-film resonator, and an acoustic mirror arranged between the resonator and the carrier substrate.Abstract:
A component operating with bulk acoustic waves has a carrier substrate, a thin-film resonator and an acoustic mirror arranged between the resonator and carrier substrate The acoustic mirror is formed by at least one high acoustic impedance layer, which is covered by a low acoustic impedance layer and the uppermost low impedance acoustic layer is planarized to form a flat planar surface on which the thin-film resonator is formedread more
Citations
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Acoustic resonator performance enhancement using alternating frame structure
TL;DR: In this paper, an acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and an alternating frame region is described.
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TL;DR: In this article, the film bulk acoustic resonators (FBARs) stacked with stacked FBARs including at least two curved edges are disclosed. But the authors did not specify the number of curved edges.
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Tiberiu Jamneala,Richard C. Ruby +1 more
TL;DR: In this article, a film bulk acoustic resonators (FBARs) having frame elements and filters including the resonators are described, and the frame elements, filters and resonators of the FBARs are described.
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Acoustic resonator structure comprising a bridge
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TL;DR: An acoustic resonator comprises a first electrode, a second electrode and a piezoelectric layer disposed between the first and second electrodes as mentioned in this paper, and a reflective element disposed beneath the first electrode.
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Acoustic resonator structure having an electrode with a cantilevered portion
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TL;DR: An acoustic resonator comprises a first electrode and second electrode comprising a plurality of sides, and at least one of the sides of the second electrode comprises a cantilevered portion.
References
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Patent
Piezoelectric resonators on a differentially offset reflector
TL;DR: In this article, a differentially offset reflector is used to isolate the resonators from the substrate, which shifts the resonant frequencies of those resonators that do not overlie the differential layer of material.
Patent
SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters
TL;DR: In this article, an acoustical resonator is constructed by creating a cavity in the substrate and filling the same with a sacrificial material that can be rapidly removed from the cavity after the deposition of the various layers making up the resonator.
Patent
Bulk acoustic wave (BAW) filter having a top portion that includes a protective acoustic mirror
TL;DR: In this article, a bulk acoustic wave (BAW) filter with an acoustic mirror is presented, which is used to isolate acoustic vibrations produced by the resonator from reaching beyond an upper surface of the acoustic mirror.
Patent
Coupled resonator bulk acoustic wave filter
TL;DR: In this paper, a microwave filter made of acoustically coupled, bulk wave acoustic resonators is proposed, where piezoelectric materials sandwiched between conducting electrodes are used to control the amount of acoustic coupling between the resonators.
Patent
Monolithic fbar duplexer and method of making the same
TL;DR: In this paper, a monolithic bulk acoustic wave (BAW) duplexer and a method for fabricating the same, the duplexers having a transmitter section as a first component filter and a receiver section as the second component filter, both component filters fabricated on a single substrate and both including at least one shunt BAW resonator and one series BAW resonance, each resonator including a resonator section atop an isolation structure provided so as to separate the resonator part from the substrate, including: a patterned bottom electrode material for use as the bottom electrode of