T
Thomas P. Brennan
Researcher at Stanford University
Publications - 16
Citations - 1012
Thomas P. Brennan is an academic researcher from Stanford University. The author has contributed to research in topics: Quantum dot & Atomic layer deposition. The author has an hindex of 12, co-authored 16 publications receiving 950 citations. Previous affiliations of Thomas P. Brennan include Princeton University.
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Journal ArticleDOI
Water flow in the gas diffusion layer of PEM fuel cells
TL;DR: In this paper, water flow through carbon cloth and carbon paper gas diffusion media used for polymer electrolyte membrane fuel cells treated with Teflon was measured, and the largest pores in a catalyst layer applied to the woven carbon cloth were ∼20μm.
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Nanoengineering and interfacial engineering of photovoltaics by atomic layer deposition
TL;DR: This review focuses on the burgeoning field of atomic layer deposition (ALD) for photovoltaics, a self-limiting thin film deposition technique that has demonstrated usefulness in virtually every sector of PV technology including silicon, thin film, tandem, organic, dye-sensitized, and next generation solar cells.
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Effect of Al2O3 Recombination Barrier Layers Deposited by Atomic Layer Deposition in Solid-State CdS Quantum Dot-Sensitized Solar Cells
Katherine E. Roelofs,Thomas P. Brennan,Juan C. Dominguez,Colin D. Bailie,George Y. Margulis,Eric T. Hoke,Michael D. McGehee,Stacey F. Bent +7 more
TL;DR: In this paper, ultrathin recombination barrier layers of Al2O3 deposited by atomic layer deposition can improve the performance of CdS quantum dot-sensitized solar cells with spiro-OMeTAD as the solid state hole transport material.
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Effects of self-assembled monolayers on solid-state CdS quantum dot sensitized solar cells.
Pendar Ardalan,Thomas P. Brennan,Han-Bo-Ram Lee,Jonathan R. Bakke,I-Kang Ding,Michael D. McGehee,Stacey F. Bent +6 more
TL;DR: Investigation of the effects of self-assembled monolayers (SAMs) with phosphonic acid headgroups on the bonding and performance of cadmium sulfide (CdS) solid-state QDSSCs finds up to ∼3 times higher power conversion efficiencies in devices with a SAM compared to those without the SAM.
Journal ArticleDOI
Atomic Layer Deposition of CdS Quantum Dots for Solid‐State Quantum Dot Sensitized Solar Cells
Thomas P. Brennan,Pendar Ardalan,Han-Bo-Ram Lee,Jonathan R. Bakke,I-Kang Ding,Michael D. McGehee,Stacey F. Bent +6 more
TL;DR: In this paper, the development of the CdS ALD process was supported as part of the Center on Nanostructuring for Efficient Energy Conversion, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Basic Energy Sciences under Award No. DE-SC0001060.