T
Tianyu Yu
Researcher at Hangzhou Dianzi University
Publications - 6
Citations - 41
Tianyu Yu is an academic researcher from Hangzhou Dianzi University. The author has contributed to research in topics: Negative impedance converter & Fall time. The author has an hindex of 2, co-authored 6 publications receiving 14 citations.
Papers
More filters
Journal ArticleDOI
Effect of different capacitance matching on negative capacitance FDSOI transistors
TL;DR: It is observed that NCFETs with a two-layer ferroelectric structure can effectively adopt the capacitance matching in different operation regions, thereby increasing the on- state current and reducing the off-state current, resulting in higher switching current ratio (ION/IOFF) than the single-layer counterpart.
Journal ArticleDOI
Negative drain-induced barrier lowering and negative differential resistance effects in negative-capacitance transistors
TL;DR: In this paper, the negative drain-induced barrier lowering (DIBL) and negative differential resistance (NDR) effects are investigated in detail in negative-capacitance field effect transistors (NCFETs) with a fully depleted silicon-on-insulator structure.
Journal ArticleDOI
Superior Performance of a Negative-capacitance Double-gate Junctionless Field-effect Transistor with Additional Source-drain Doping
TL;DR: In this article, a negative-capacitance double-gate junctionless field effect transistor (NC-JLFET) with additional source-drain doping was proposed, and the effect of drain induced barrier lowering (DIBL) and negative differential resistance (NDR) was analyzed.
Proceedings ArticleDOI
Effect of Random Channel Dopants on Timing Variation for Nanometer CMOS Inverters
Kai Zhang,Yu-ning Chen,Yu Dong,Zi-qiang Xie,Zhifeng Zhao,Peng Si,Tianyu Yu,Liang Dai,Wei-feng Lv +8 more
TL;DR: In this article, a detailed investigation of the timing variation due to random channel dopants for 22nm Complementary-Metal-Oxide-Semiconductor (CMOS) inverter is presented.
Journal ArticleDOI
Performance improvement of timing and power variations due to random dopant fluctuation in negative-capacitance CMOS inverters
TL;DR: The authors found that the transition delay in the NC-CMOS inverter exhibits a strongly dependence on the viscosity coefficient of the ferroelectric (FE) of the CMOS, which can provide useful insights into future studies of low-power CMOS digital circuits.