Showing papers by "Tigran T. Mnatsakanov published in 1987"

Investigation of the effect of nonlinear physical phenomena on charge carrier transport in semiconductor devices

Abstract: New transport equations for charge carriers in semiconductors are proposed. In addition to the usual drift and diffusion, extra terms represent electron-hole scattering. A generalized form of the Einstein relation in the case of a strong electron-hole scattering is established. The matrix form of the Einstein relation enables the calculation of an effective algorithm for the solution of basic transport equations. This algorithm was used for calculating the current-voltage characteristics of test structures. Analysis has shown that incorrect treatment of electron-hole collisions in previous models leads to over rating of their contribution to the current-voltage characteristics of silicon multilayer structures.

Transport Coefficients and Einstein Relation in a High Density Plasma of Solids

Abstract: General expressions for charge carriers transport in the high density isothermal plasma of semiconductors and semimetals are derived. In addition to the usual drift and diffusion ones extra terms arise which describe a mutual drag of charge carriers due to electron-hole scattering. A generalised matrix form of the Einstein relation is established. It is shown that nondiagonal elements in transport coefficients matrices arise due to electron-hole scattering.