Showing papers by "Timothy J. Maloney published in 1999"

Method and apparatus for optically modulating an optical beam with long interaction length optical modulator

Abstract: An optical modulator that modulates light through the semiconductor substrate through the back side of an integrated circuit die. In one embodiment, the optical beam enters through the back side of the semiconductor substrate at a first location. The path of the optical beam is altered such that the optical beam passes through and along and through a path parallel or nearly parallel to the front side of the semiconductor substrate. In one embodiment, the optical modulator includes a charged layer through which the optical beam is directed along the path parallel or nearly parallel to the front side. In one embodiment, the charge concentration of free charge carriers is modulated in response to a signal of the integrated circuit die, resulting in modulation of the optical beam. In one embodiment, after the optical beam passes through the path parallel or nearly parallel to the front side, the path of the optical beam is altered such that the optical beam is directed out through a second location on the back side of the semiconductor substrate. In one embodiment, the first and second locations in the back side are angled or beveled. In one embodiment, refractors are used to alter the path of the optical beam. In another embodiment, grating structures are used to alter the path of the optical beam. In one embodiment, the structure of the present invention may also be used to provide an optical waveguide.

Method and apparatus for optically modulating light through the back side of an integrated circuit die along the side walls of junctions

Abstract: An optical modulator that modulates light through the back side of a flip chip packaged integrated circuit die. In one embodiment, an optical modulator includes a p-n junction having a side wall that is substantially vertical or perpendicular relative to a surface of the integrated circuit die. A charged region is generated at the p-n junction and is modulated in response to an electrical signal of the integrated circuit die. An optical beam is directed through the back side, of the semiconductor substrate and through the charged region along the side wall p-n junction. The optical beam is deflected off a deflector back through the charged region along the side wall back out the back side. In one embodiment, the side wall p-n junction is provided with a metal oxide semiconductor (MOS) gate structure. In another embodiment, the side wall p-n junction is provided by an n− (or p−) well in a p− (or n−) epitaxy layer of the semiconductor substrate. In one embodiment, the well is a well ring structure. In another embodiment, there are a plurality of wells periodically located in the epitaxy layer of the semiconductor substrate. In one embodiment, the well or plurality of wells are surrounded with an optical beam confinement structure.

Power supply clamp for esd protection

Abstract: Circuitry is provided which increases the efficiency of electrostatic discharge (ESD) power supply clamping circuitry to sink larger currents during an ESD event on a power supply node. Voltage clamp circuits capable of providing ESD protection to a supply node are described. The voltage clamp circuits include a discharge transistor which is controlled by a control circuit during an ESD event. The control circuit operates in response to a voltage provided on the protected supply node. One embodiment provides a P-channel MOS transistor and a control circuit which drives the gate of the transistor. Another embodiment provides an N-channel MOS transistor and a control circuit which drives the gate of the transistor.