T
Tom Zhong
Researcher at TSMC
Publications - 6
Citations - 155
Tom Zhong is an academic researcher from TSMC. The author has contributed to research in topics: Layer (electronics) & Etching (microfabrication). The author has an hindex of 4, co-authored 6 publications receiving 155 citations.
Papers
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Patent
Use of CMP to contact a MTJ structure without forming a via
TL;DR: In this paper, a process for making contact to the buried capping layers of GMR and MTJ devices without the need to form and fill via holes is described, where CMP is applied to the structure in three steps: (1) conventional CMP, (2) a Highly Selective Slurry (HSS) is substituted for the conventional slurry to just expose the capping layer, and (3) the HSS is diluted and used to clean the surface as well as to cause a slight protrusion of the Capping layers above the surrounding dielect
Patent
Method of MRAM fabrication with zero electrical shorting
TL;DR: In this paper, an MTJ cell without footings and free from electrical short-circuits across a tunneling barrier layer is formed by using a Ta hard mask layer and a combination of etches.
Patent
Bottom electrode for MRAM device and method to fabricate it
Rongfu Xiao,Cheng Tzong Horng,Ru-Ying Tong,Chyu-Jinh Torng,Tom Zhong,Witold Kula,Terry Kin Ting Ko,Wei Cao,Wai-Ming J. Kan,Liubo Hong +9 more
TL;DR: In this paper, a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a layer of ruthenium near the silicon oxide surface, which is a good electrical conductor and responds differently from Ta and TaN to certain etchants.
Patent
Process to fabricate bottom electrode for MRAM device
Rongfu Xiao,Cheng Tzong Horng,Ru-Ying Tong,Chyu-Jinh Torng,Tom Zhong,Witold Kula,Terry Kin Ting Ko,Wei Cao,Wai-Ming J. Kan,Liubo Hong +9 more
TL;DR: In this paper, a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a protective coating that is partly consumed during etching of the alpha tantalum portion of said bottom electrode.
Patent
Bottom electrode for MRAM device
Rongfu Xiao,Cheng Tzong Horng,Ru-Ying Tong,Chyu-Jinh Torng,Tom Zhong,Witold Kula,Terry Kin Ting Ko,Wei Cao,Wai-Ming J. Kan,Liubo Hong +9 more
TL;DR: In this paper, a multi-layered bottom electrode for an MTJ device on a silicon nitride substrate is described, which comprises a bilayer of alpha tantalum on ruthenium which in turn lies on a nickel chrome layer over a second tantalum layer.