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Tomas Löfwander

Researcher at Chalmers University of Technology

Publications -  72
Citations -  4539

Tomas Löfwander is an academic researcher from Chalmers University of Technology. The author has contributed to research in topics: Superconductivity & Quasiparticle. The author has an hindex of 21, co-authored 66 publications receiving 3996 citations. Previous affiliations of Tomas Löfwander include Karlsruhe Institute of Technology & Northwestern University.

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Current-Voltage Relations in d-wave Josephson Junctions: Effects of Midgap Interface States

TL;DR: In this paper, the authors investigated the dc currentvoltage characteristics of d-wave Josephson junctions, where the barrier at the interface may have arbitrary strength, and they showed that MGS may produce a current peak near zero bias and explain which physical processes are contributing to this peak.
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Thermopower and thermophase in a <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>d</mml:mi></mml:math> -wave superconductor

TL;DR: In this paper , the thermoelectric response of a $d$-wave superconductor connected to normal-metal reservoirs under a temperature bias using a fully self-consistent quasiclassical theory is examined.
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Properties of zero-energy surface states in d-wave superconducting junctions

TL;DR: The formation of quasiparticle zero-energy bound states at surfaces and interfaces of high-Tc superconductors is a direct consequence of the d-wave symmetry of the order parameter.
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Low‐Temperature Thermal Conductivity of Superconductors With Gap Nodes

TL;DR: Transport theory, including impurity scattering and inelastic scattering within strong-coupling superconductivity, can consistently fit the temperature dependence of the data in the lower half of the temperature regime.
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Quasiclassical Theory of Spin Imbalance in a Normal Metal-Superconductor Heterostructure with a Spin-Active Interface

TL;DR: In this paper, a quasiclassical theory of a single junction between a normal metal and a superconductor with a spin-active interface at finite bias voltages was developed.