An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A system includes a semiconductor device. The semiconductor device includes a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying the at least one metal layer. The second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands. Each of a plurality of the bands comprises a portion of the second transistors along an axis in a repeating pattern.

System comprising a semiconductor device and structure

A device comprising semiconductor memories, the device comprising: a first layer and a second layer of layer-transferred mono-crystallized silicon, wherein the first layer comprises a first plurality of horizontally-oriented transistors; wherein the second layer comprises a second plurality of horizontally-oriented transistors; and wherein the second plurality of horizontally-oriented transistors overlays the first plurality of horizontally-oriented transistors.

Semiconductor device and structure

A method and apparatus for depositing a film on a substrate by plasma-enhanced chemical vapor deposition at temperatures substantially lower than conventional thermal CVD temperatures comprises placing a substrate within a reaction chamber and exciting a first gas upstream of the substrate to generate activated radicals of the first gas. The substrate is rotated within the deposition chamber to create a pumping action which draws the gas mixture of first gas radicals to the substrate surface. A second gas is supplied proximate the substrate to mix with the activated radicals of the first gas and the mixture produces a surface reaction at the substrate to deposit a film. The pumping action draws the gas mixture down to the substrate surface in a laminar flow to reduce recirculation and radical recombination such that a sufficient amount of radicals are available at the substrate surface to take part in the surface reaction. Another method utilizes a gas-dispersing showerhead that is biased with RF energy to form an electrode which generates activated radicals and ions in a concentrated plasma close to the substrate surface. The activated plasma gas radicals and ions utilized in the invention contribute energy to the surface reaction such that the film may be deposited at a substantially lower deposition temperature that is necessary for traditional thermal CVD techniques. Furthermore, the activation of these species reduces the temperature needed to complete the surface reaction. The method is particularly useful in depositing titanium-containing films at low temperatures.

Method for producing titanium thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor

A device integration method and integrated device. The method may include the steps of directly bonding a semiconductor device having a substrate to an element; and removing a portion of the substrate to expose a remaining portion of the semiconductor device after bonding. The element may include one of a substrate used for thermal spreading, impedance matching or for RF isolation, an antenna, and a matching network comprised of passive elements. A second thermal spreading substrate may be bonded to the remaining portion of the semiconductor device. Interconnections may be made through the first or second substrates. The method may also include bonding a plurality of semiconductor devices to an element, and the element may have recesses in which the semiconductor devices are disposed. A conductor array having a plurality of contact structures may be formed on an exposed surface of the semiconductor device, vias may be formed through the semiconductor device to device regions, and interconnection may be formed between said device regions and said contact structures.

Three dimensional device integration method and integrated device

In a method of manufacturing a stacked-type semiconductor device, firstly, a first semiconductor substrate having a first device formed thereon is covered with an interlayer insulating layer and a planarized polycrystalline silicon layer is formed on the interlayer insulating layer. The first semiconductor substrate and a second semiconductor substrate are joined together by putting the surface of the polycrystalline silicon layer in close contact with the surface of a refractory metal layer formed on the second semiconductor substrate, applying thermal treatment at 700° C. or below and changing the refractory metal layer to silicide.

Stacked-type semiconductor device

A principal feature of the present invention is to clean a surface of a semiconductor substrate without providing a damaged layer to the surface thereof. A native oxide film formed on the surface of a silicon substrate is etched by plasma employing a gas containing fluorine. The surface of the semiconductor substrate is again subjected to plasma etching by employing a gas containing fluorine in order to remove a surface damaged layer and a fluorocarbon layer formed in the above step of plasma etching. The semiconductor substrate surface is irradiated with ultraviolet rays under a low pressure in order to dissociate and remove fluorine atoms chemically adsorbed to the semiconductor substrate surface upon the latter plasma etching.

Method of treating semiconductor substrate surface and method of manufacturing semiconductor device including such treating method

PROBLEM TO BE SOLVED: To provide a server rack, capable of contributing to energy saving by surely discharging warm air used for cooling of a server out of a rack body, supplying an appropriate quantity of cold air according to the heating value of the server, and thus preventing wasteful blowing of an air conditioner without temperature unevenness within a server management room, and a data center provided with the same. SOLUTION: The server rack comprises a rack body 1 having an air intake port 7 and an exhaust port 8. A plurality of server storage chambers 4 partitioned by a partition plate 3 are formed within the rack body 1, and a fan 2 capable of blowing a larger quantity of air than that in a built-in fan 6 provided by a sever 5 stored in the server storage chamber 4 is provided in the exhaust port 8. COPYRIGHT: (C)2009,JPO&INPIT

Server rack and data center provided with the same

An apparatus for treating semiconductor wafers utilizing a plasma generated by electron cyclotron resonance (ECR) is disclosed in which a microwave is supplied to a plasma generating chamber via a rectangular waveguide, a rectangular-to-circular microwave converter, and a circular polarization converter. The polarization converter may comprise a phase shift plate of a dielectric material or an electrically conductive material disposed in a circular waveguide in the form of a metallic cylinder. The polarization converter transforms a circular TE11 mode microwave supplied from the rectangular-to-circular microwave converter to a circularly polarized one by rotating the direction of the electric field of the microwave in the TE11 mode one complete turn in one period of the microwave. Thus, the electric field strength of the microwave supplied to the plasma generating chamber is averaged over the time along the circumferential direction in the plasma generating chamber to make the density of plasma generation therein spatially uniform. The spatially uniformly distributed plasma generated in the plasma generating chamber is conveyed to the wafer in the wafer treating chamber to effect a treatment of the wafer.

Semiconductor wafer treating apparatus utilizing a plasma

PROBLEM TO BE SOLVED: To provide a cooling water control method of a refrigerator for effectively saving energy of an entire system by conducting drive control of equipment of a cooling water circulation system so as to maximize comprehensive energy efficiency of the entire system by comprehensively considering power consumption of a primary side facility such as a cooling water pump and a cooling tower or the like of a primary side cooling water system of the refrigerator, and a cold water pump of a secondary side cold water system, and the refrigerator itself. SOLUTION: The cooling water control method of the refrigerator 1 provided with the primary side facility including the cooling water pump 2 and the cooling tower 3 on a primary side (the cooling water system 14) of the refrigerator 1 for circulating the cooling water, and a secondary side facility 28 as a heat load on a secondary side (the cold water system 29) for circulating cold water, operates a heat source integrated COP of an entire refrigerator system including the primary side facility (2, 3) and the secondary side facility 28 by dividing refrigerator producing heat quantity by heat source integrated power consumption, and controls the cooling water pump 2 and a fan of the cooling tower 3 on the basis of the heat source integrated COP. COPYRIGHT: (C)2005,JPO&NCIPI

Toshiaki Ogawa

Papers

Stacked-type semiconductor device

Method of treating semiconductor substrate surface and method of manufacturing semiconductor device including such treating method

Server rack and data center provided with the same

Semiconductor wafer treating apparatus utilizing a plasma

Cooling water control method for refrigerator