A method for fabricating a semiconductor device includes forming a target etch layer over a substrate, a first auxiliary layer over the target etch layer, an isolation layer over the first auxiliary layer, and a second auxiliary layer over the isolation layer. A first exposure process is performed, where the first auxiliary layer is in focus and the second auxiliary layer is out of focus. A second exposure process is performed, where the second auxiliary layer in focus and the first auxiliary layer is out of focus. The second auxiliary layer is developed to form first mask patterns. The isolation layer and the first auxiliary layer are etched by using the first mask patterns to form second mask patterns. The second mask patterns are developed to form third mask patterns that are used to facilitate subsequent etching of the target etch layer.

Method of forming micro pattern of semiconductor device

In forming five trenches buried with an intermediate conductive layer for connecting transfer MISFETs and driving MISFETs with vertical MISFETs formed thereover, in which the second and third trenches, and the first, fourth, and fifth trenches are formed separately by twice etching using first and second photoresist films as a mask. Since all the trenches can be formed at a good accuracy even in a case where the shortest distance between the first trench and the second or third trench, and the shortest distance between the second or third trench and the fourth trench is smaller than the resolution limit for the exposure light, the distance between each of the five trenches arranged in one identical memory cell can be reduced to be smaller than resolution limit for the exposure light.

Method of manufacturing a semiconductor integrated circuit device

In a laser irradiation device, a patterning method and a method of fabricating an Organic Light Emitting Display (OLED) using the same. The laser irradiation device includes a light source, a mask, a projection lens, and a Fresnel lens formed at a predetermined portion of the mask to change an optical path. When an organic layer pattern is formed using the laser irradiation device, laser radiation is irradiated onto a region of an organic layer, which is to be cut, and the laser radiation is appropriately irradiated onto a region of the organic layer, which is to be separated from a donor substrate. The laser radiation irradiated onto an edge of the organic layer pattern has a laser energy density greater than that of the laser radiation irradiated onto other portions of the organic layer pattern. As a result, it is possible to form a uniform organic layer pattern and reduce damage of the organic layer.

Laser irradiation device, patterning method and method of fabricating organic light emitting display (oled) using the patterning method

A photoresist pattern and a method of fabricating the same make it easy to quickly identify a particular portion of a photolithography process that is responsible for causing process defects. The method of fabricating the photoresist pattern includes forming main patterns having a predetermined critical dimension in device-forming regions of a semiconductor substrate, and forming a plurality of test patterns in scribe regions of the substrate. The scribe regions are defined alongside the device-forming regions and separate the device-forming regions from one another. The test patterns have shapes similar to that of the main patterns. Also, one of the test patterns has a critical dimensions similar to that of the main patterns, and other test patterns have respective critical dimensions that are different from the critical dimension of the main patterns.

Photoresist pattern, method of fabricating the same, and method of assuring the quality thereof

A method of fabricating a printhead having a hydrophobic ink ejection face is provided. The method comprises the steps of: (a) providing a partially-fabricated printhead comprising a plurality of nozzle chambers and a relatively hydrophilic nozzle surface, the nozzle surface at least partially defining the ink ejection face; (b) depositing a layer of relatively hydrophobic polymeric material onto the nozzle surface, the polymeric material being resistant to removal by ashing; and (c) defining a plurality of nozzle openings in the nozzle surface, thereby providing a printhead having a relatively hydrophobic ink ejection face. Steps (b) and (c) may be performed in any order.

Method of fabricating printhead having hydrophobic ink ejection face

A method for manufacturing an electronic device is provided. In one example of the method, the method prevents deformation of a resist mask caused by the irradiation of exposure light. The resist mask has a resist as an opaque element, and can afford mask patterns undergoing little change even with an increase in the number of wafers subjected to exposure processing. The resist mask maintains a high dimensional accuracy. A photomask pattern is formed using as an opaque element a resist comprising a base resin and Si incorporated therein or a resist with a metal such as Si incorporated thereby by a silylation process, to improve the resistance to active oxygen. The deformation of a resist opaque pattern in a photomask is prevented. The dimensional accuracy of patterns transferred onto a Si wafer is improved in repeated use of the photomask.

Toshihiko Tanaka

Papers

Method for manufacturing an electronic device