An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.

Semiconductor device, electronic device, and method of manufacturing semiconductor device

A method of manufacturing a thin film transistor (“TFT”) substrate includes forming a first conductive pattern group including a gate electrode on a substrate, forming a gate insulating layer on the first conductive pattern group, forming a semiconductor layer and an ohmic contact layer on the gate insulating layer by patterning an amorphous silicon layer and an oxide semiconductor layer, forming a second conductive pattern group including a source electrode and a drain electrode on the ohmic contact layer by patterning a data metal layer, forming a protection layer including a contact hole on the second conductive pattern group, and forming a pixel electrode on the contact hole of the protection layer. The TFT substrate including the ohmic contact layer formed of an oxide semiconductor is further provided.

Thin film transitor substrate and method of manufacturing the same

An organic light-emitting diode (OLED) display is disclosed. In one aspect, the display includes a stretchable substrate, a thin film transistor (TFT) formed over the stretchable substrate and including a plurality of electrodes, an OLED electrically connected to the TFT and including a plurality of electrodes, and a plurality of interconnection lines connected to the electrodes of the OLED and the TFT. At least one of the interconnection lines is configured to move in a stretching direction and rotate an electrode selected from the electrodes of the OLED and the TFT connected to the at least one interconnection line.

Organic light-emitting diode display

The invention provides a display device and a method for manufacturing thereof by increasing a material efficiently as well as simplifying steps. Also, the invention provides a technique for forming a pattern such as a wiring, that is used for forming a display device, to have a predetermined shape with an excellent controllability. The method for manufacturing a display device includes the steps of: forming a lyophobic region; selectively irradiating laser beam in the lyophobic region to form a lyophilic region; selectively discharging a composition, that contains a conductive material, in the lyophilic region to form a gate electrode layer; forming a gate insulating layer and a semiconductor layer over the gate electrode layer; discharging a composition containing a conductive material over the semiconductor layer to form a source electrode layer and a drain electrode layer; and forming a pixel electrode layer on the source or drain electrode layer.

Display device, method for manufacturing thereof, and television device

PROBLEM TO BE SOLVED: To provide a semiconductor device which is manufactured by simplifying the manufacturing process while enhancing utilization efficiency of material, and also to provide a display, its manufacturing technology, and a technique for forming the wiring pattern constituting these semiconductor devices and the display with desired profile and high controllability. SOLUTION: Conductor layers having nodes are formed adjacently at a uniform interval. In the adjacent conductive layers, a liquid drop is ejected while shifting the central position in the length direction of wiring not to be aligned in the line width direction. Since the center of a liquid drop is shifted, maximum line width parts (maximum node) of the conductive layers do not adjoin and the conductive layers can be provided adjacently at a narrower interval. COPYRIGHT: (C)2006,JPO&NCIPI

Semiconductor device, electronic apparatus, and process for manufacturing semiconductor device

It is an object of the present invention to minimize an electrode in a solar cell to minimize the solar cell. The present invention provides a method for manufacturing a solar cell comprising the steps of forming a first electrode layer over a substrate, forming a photoelectric conversion layer over the first electrode layer, forming an organic layer over the photoelectric conversion layer, forming an opening reaching the first electrode layer in the photoelectric conversion layer, and forming a second electrode layer by filling the opening with a conductive paste, wherein the organic layer modifies the surface of the photoelectric conversion layer and a contact angle between the conductive paste and the photoelectric conversion becomes greater. According to the present invention, wettability of a photoelectric conversion layer can be decreased by forming an organic layer on a surface of the photoelectric conversion layer. Thereby an electrode layer and an insulating isolation layer can be thinned.

Solar cell and semiconductor device, and manufacturing method thereof

An object of the present invention is to provide a display device which can be manufactured with usability of a material improved and with a manufacturing step simplified and to provide a manufacturing technique thereof. One feature of a display device of the present invention is to comprise an insulating layer having an opening, a first conductive layer formed in the opening, and a second conductive layer formed over the insulating layer and the first conductive layer, wherein the first conductive layer is wider and thicker than the second conductive layer, and the second conductive layer is formed by spraying a droplet including a conductive material.

Toshiyuki Isa

Papers

Semiconductor device, electronic device, and method of manufacturing semiconductor device

Display device, method for manufacturing thereof, and television device

Semiconductor device, electronic apparatus, and process for manufacturing semiconductor device

Solar cell and semiconductor device, and manufacturing method thereof

Display device, method for manufacturing the same, and television apparatus