T
Tsuyoshi Miyazaki
Researcher at National Institute for Materials Science
Publications - 115
Citations - 3412
Tsuyoshi Miyazaki is an academic researcher from National Institute for Materials Science. The author has contributed to research in topics: Density functional theory & Ab initio. The author has an hindex of 26, co-authored 110 publications receiving 2892 citations. Previous affiliations of Tsuyoshi Miyazaki include Tokyo University of Science & University of Tokyo.
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O(N) methods in electronic structure calculations.
TL;DR: The theory behind the locality of electronic structure is described and related to physical properties of systems to be modelled, along with a survey of recent developments in real-space methods which are important for efficient use of high-performance computers.
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Recent progress in linear scaling ab initio electronic structure techniques
TL;DR: This work describes recent progress in developing linear scaling ab initio electronic structure methods, referring in particular to the authors' highly parallel code CONQUEST.
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Calculations for millions of atoms with density functional theory: linear scaling shows its potential.
TL;DR: It is demonstrated that essentially perfect linear scaling and weak parallel scaling can be achieved, and that DFT calculations on millions of atoms are now possible.
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Recent progress with large‐scale ab initio calculations: the CONQUEST code
TL;DR: Recent progress is reported in the development of the Conquest code, which performs 𝒪(N ) DFT calculations on parallel computers, and has a demonstrated ability to handle systems of over 10000 atoms.
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Gate controlling of quantum interference and direct observation of anti-resonances in single molecule charge transport
Yueqi Li,Marius Buerkle,Guangfeng Li,Ali Rostamian,Hui Wang,Zixiao Wang,David R. Bowler,David R. Bowler,Tsuyoshi Miyazaki,Limin Xiang,Yoshihiro Asai,Gang Zhou,Nongjian Tao,Nongjian Tao +13 more
TL;DR: By tuning the molecule in and out of anti-resonance, this work achieves continuous control of the conductance over two orders of magnitude with a subthreshold swing of ~17 mV dec−1, features relevant to high-speed and low-power electronics.