Showing papers by "U-In Chung published in 1992"
Patent•
30 Oct 1992TL;DR: The surface of a borophosphosilicate glass (BPSG) dielectric film is changed through a surface treatment, such as by plasma etching with N2 O, O3 or O2.
Abstract: The surface of a borophosphosilicate glass (BPSG) dielectric film is changed through a surface treatment, such as by plasma etching with N2 O, O3 or O2. Erosion caused by H2 SO4 boiling or by humidity absorption from the atmosphere is thereby reduced so that reflow processing at temperatures below 850° C. is possible and an interlayer dielectric film of excellent planarity is thus formed.
27 citations
Patent•
28 Oct 1992
TL;DR: In this article, the limit of B and P concentrations is surmounted by changing the surface of borophosphosilicate glass with a surface treatment such as plasma (3) processing of N₂O, O₃ or O ₂, and encroachment caused by H₆SO₄ boiling or by humidity absorption from the exterior is also removed such that low temperature reflow process below 850°C is established and an interlayer dielectric film of excellent planarity is formed.
Abstract: The limit of B and P concentrations is surmounted by changing the surface of borophosphosilicate glass with a surface treatment such as plasma (3) processing of N₂O, O₃ or O₂, and encroachment caused by H₂SO₄ boiling or by humidity absorption from the exterior is also removed such that low temperature reflow process below 850°C is established and an interlayer dielectric film (2) of excellent planarity is formed.
7 citations
Patent•
28 Oct 1992
2 citations