Showing papers by "Uddalak Bhattacharya published in 1998"
TL;DR: In this paper, the concept of transferred-substrate HBTs fabrication process in the AlInAs/GaInAs material system is presented, followed by DC and RF performance A demonstration IC is shown along with some integrated circuits in development.
Abstract: Transferred-substrate heterojunction bipolar transistors (HBTs) have demonstrated very high bandwidths and are potential candidates for very high speed integrated circuit (IC) applications The transferred-substrate process permits fabrication of narrow and aligned emitter-base and collector-base junctions, reducing the collector-base capacitance and increasing the device fmax Unlike conventional double-mesa HBTs, transferred-substrate HBTs can be scaled to submicron dimensions with a consequent increase in bandwidth This paper introduces the concept of transferred-substrate HBTs Fabrication process in the AlInAs/GaInAs material system is presented, followed by DC and RF performance A demonstration IC is shown along with some integrated circuits in development
3 citations