http://ieeexplore.ieee.org/iel5/5610941/5624686/05624745.pdf

Power electronics

We present CasADi, an open-source software framework for numerical optimization. CasADi is a general-purpose tool that can be used to model and solve optimization problems with a large degree of flexibility, larger than what is associated with popular algebraic modeling languages such as AMPL, GAMS, JuMP or Pyomo. Of special interest are problems constrained by differential equations, i.e. optimal control problems. CasADi is written in self-contained C++, but is most conveniently used via full-featured interfaces to Python, MATLAB or Octave. Since its inception in late 2009, it has been used successfully for academic teaching as well as in applications from multiple fields, including process control, robotics and aerospace. This article gives an up-to-date and accessible introduction to the CasADi framework, which has undergone numerous design improvements over the last 7 years.

/pdf/casadi-a-software-framework-for-nonlinear-optimization-and-ddx9m9nls6.pdf

CasADi: a software framework for nonlinear optimization and optimal control

https://cyberleninka.org/article/n/247805.pdf

A brief review of atomic layer deposition: from fundamentals to applications

Copper indium gallium selenide (CIGS) based solar cells are receiving worldwide attention for solar power generation. They are efficient thin film solar cells that have achieved 22.8% efficiency comparable to crystalline silicon (c-Si) wafer based solar cells. For a production capacity of 1000 MW y−1 with 15% module efficiency, the CIGS module production cost is expected to be $0.34 W−1. For CIGS cells over glass, a graded bandgap high temperature deposition process has been established, however, this process has not been established for CIGS over flexible polymer substrates which is a low temperature process. For small area devices, the main focus is precise control over CIGS film stoichiometry and efficiency. For industrial production, apart from stoichiometry and efficiency, low-cost, reproducibility, high-throughput and process tolerance are of much importance in commercializing the technology. Due to process complexity, CIGS module production is lagging behind that of cadmium telluride (CdTe) modules. In this review article, the working mechanism of CIGS solar cells with a back surface field, the importance of developing CIGS solar cells, and the limitations for their commercialization are discussed. CIGS solar cells are compared with c-Si solar cells. After briefly reviewing the history of the chalcopyrite alloy system, graded bandgaps, effects of sodium distribution in CIGS layers, growth of CIGS layers using various techniques, role of buffer layer/transparent conducting oxides, CdS free buffer layers, concerns related to flexible solar cells, and factors affecting the cell efficiency are reviewed. Further efficiency improvement options are discussed. Cell stability, challenges, solutions and future prospects of CIGS solar cells are outlined.

Copper indium gallium selenide based solar cells – a review

The aim of the present contribution is to give a review on the recent work concerning Cd-free buffer and window layers in chalcopyrite solar cells using various deposition techniques as well as on their adaptation to chalcopyrite-type absorbers such as Cu(In,Ga)Se-2, CuInS2, or Cu(In,Ga)(S,Se)(2). The corresponding solar-cell performances, the expected technological problems, and current attempts for their commercialization will be discussed. The most important deposition techniques developed in this paper are chemical bath deposition, atomic layer deposition, ILGAR deposition, evaporation, and spray deposition. These deposition methods were employed essentially for buffers based on the following three materials: In2S3, ZnS, Zn1-xMgxO.

Buffer layers and transparent conducting oxides for chalcopyrite Cu(In,Ga)(S,Se)(2) based thin film photovoltaics : Present status and current developments

In this paper, co-evaporation of Cu(In,Ga)Se2 (CIGS) in an inline single-stage process is used to fabricate solar cell devices with up to 18.6% conversion efficiency using a CdS buffer layer and 18.2% using a Zn1-xSnxOy Cd-free buffer layer. Furthermore, a 15.6-cm2 mini-module, with 16.8% conversion efficiency, has been made with the same layer structure as the CdS baseline cells, showing that the uniformity is excellent. The cell results have been externally verified. The CIGS process is described in detail, and material characterization methods show that the CIGS layer exhibits a linear grading in the [Ga]/([Ga]+[In]) ratio, with an average [Ga]/([Ga]+[In]) value of 0.45. Standard processes for CdS as well as Cd-free alternative buffer layers are evaluated, and descriptions of the baseline process for the preparation of all other steps in the Angstrom Solar Center standard solar cell are given.

/pdf/inline-cu-in-ga-se-2-co-evaporation-for-high-efficiency-4ddjo6srvb.pdf

Inline Cu(In,Ga)Se $_{2}$ Co-evaporation for High-Efficiency Solar Cells and Modules

Laser patterning of P2 interconnect via in thin-film CIGS PV modules

Baseline model of graded-absorber Cu(In,Ga)Se2 solar cells applied to cells with Zn1 − xMgxO buffer layers

http://www.diva-portal.org/smash/get/diva2:358290/FULLTEXT02

Effect of gallium grading in Cu(In,Ga)Se2 solar-cell absorbers produced by multi-stage coevaporation

Until this day, the most efficient Cu(In,Ga)Se2 thin film solar cells have been prepared using a rather complex growth process often referred to as three-stage or multistage. This family of processes is mainly characterized by a first step deposited with only In, Ga and Se flux to form a first layer. Cu is added in a second step until the film becomes slightly Cu-rich, where-after the film is converted to its final Cu-poor composition by a third stage, again with no or very little addition of Cu. In this paper, a comparison between solar cells prepared with the three-stage process and a one-stage/in-line process with the same composition, thickness, and solar cell stack is made. The one-stage process is easier to be used in an industrial scale and do not have Cu-rich transitions. The samples were analyzed using glow discharge optical emission spectroscopy, scanning electron microscopy, X-ray diffraction, current–voltage-temperature, capacitance-voltage, external quantum efficiency, transmission/reflection, and photoluminescence. It was concluded that in spite of differences in the texturing, morphology and Ga gradient, the electrical performance of the two types of samples is quite similar as demonstrated by the similar J–V behavior, quantum spectral response, and the estimated recombination losses. Copyright © 2014 John Wiley & Sons, Ltd.

Uwe Zimmermann

Papers

Inline Cu(In,Ga)Se $_{2}$ Co-evaporation for High-Efficiency Solar Cells and Modules

Laser patterning of P2 interconnect via in thin-film CIGS PV modules

Baseline model of graded-absorber Cu(In,Ga)Se2 solar cells applied to cells with Zn1 − xMgxO buffer layers

Effect of gallium grading in Cu(In,Ga)Se2 solar-cell absorbers produced by multi-stage coevaporation

A comparison between thin film solar cells made from co‐evaporated CuIn1‐xGaxSe2 using a one‐stage process versus a three‐stage process