A benchmarking of silane, disilane and dichlorosilane for the low temperature growth of group IV layers

Phosphorus in situ doped (Si1-yCy) films (SiC:P) with substitutional carbon concentration of 1.7% and 2.1% were selectively grown in the source and drain regions of double-gate -oriented (110)-sidewall FinFETs to induce tensile strain in the silicon channel. In situ doping removes the need for a high-temperature spike anneal for source/drain (S/D) dopant activation and thus preserves the carbon substitutionality in the SiC:P films as grown. A strain-induced enhancement of 15% and 22% was obtained for n-channel FinFETs with 1.7% and 2.1% carbon incorporated in the S/D, respectively.

Strained n-Channel FinFETs Featuring In Situ Doped Silicon–Carbon $(\hbox{Si}_{1 - y}\hbox{C}_{y})$ Source and Drain Stressors With High Carbon Content

Characterization and analysis of epitaxial silicon phosphorus alloys for use in n-channel transistors

We present a simulation study on the effect of the gate module on the channel stress in Si1-xGex and Si1-yCy S/D MOS transistors. Stiff gate materials, such as titanium nitride, lead to a decreased channel stress, while a replacement-gate scheme allows the increase of the effectiveness of the Si1-xGex and Si1-yCy S/D techniques significantly, independent of the gate material used. The drawback of using a replacement gate is that the channel stress becomes more sensitive to layout variations. In terms of effect on Si1-xGex/Si1-yCy S/D stress generation, using a thin metal gate capped by polysilicon is similar to a full metal gate if the thin metal gate thickness exceeds 10 nm. Even metal gates as thin as 1 nm have a clear influence on the stress generation by Si1-xGex/Si1-yCy S/D. Removing and redepositing the polysilicon layer while leaving the underlying metal gate unchanged increases the stress, although not to the same extent as for complete gate removal. A simple analytical model that estimates the stress in nested short-channel Si1-xGex and Si1-yCy S/D transistors is presented. This model includes the effect of germanium/carbon concentration, active-area length, as well as the effect of gate length and the Young's modulus of the gate. Good qualitative agreement with 2-D finite element modeling is demonstrated.

Gate Influence on the Layout Sensitivity of $ \hbox{Si}_{1 - x}\hbox{Ge}_{x}\ \hbox{S/D}$ and $\hbox{Si}_{1 - y}\hbox{C}_{y}\ \hbox{S/D}$ Transistors Including an Analytical Model

Review of the potential of silanes as rocket/scramjet fuels

Growth rates up to 82 nm/min (at 550degC) led to films incorporating up to 3.6% substitutional carbon according to Vegard's law; (2.8% after (Kelires, 1998)) and an alpha/epi growth rate ratio of 1. The films were fully strained with perpendicular lattice constants of down to 5.363 Aring and displayed stress well above 2 GPa. Moreover, these films could be heavily doped with P and led to resistivities as low as 0.5 - 1.5 mOmegacm

V. Machkauotsan

Papers

Highly Tensile Strained Silicon Carbon Phosphorus Alloys Epitaxially Grown into Recessed Source Drain Areas of NMOS devices