Structural transformations in non-metallic solids induced by energetic heavy ions at intermediate (∼1013−1016 ions/cm2) and high (∼ 1017 ions/cm2) doses normally take the form of amorphization, crystallization, or stoichiometry changes. Using the results of 72 substances both a temperature-ratio and a bond-type criterion are shown to be successful in predicting the occurrence of amorphization or crystallization. The former, based on a physical model involving thermal spikes, states that amorphization should occur whenever the ratio (crystallization temperature)/(melting point) exceeds 0.30. The latter, of more or less empirical origin, states that amorphization should occur whenever the ionicity is ≤0.47. Stoichiometry changes are basically different from amorphization and crystallization and this is reflected in the criterion. It is shown that whether or not a substance (such as AgBr or TiO2) loses a component (such as Br or O) during bombardment correlates with the heat of atomization showing a...

Criteria for bombardment-induced structural changes in non-metallic solids

The incorporation of impurities into solids by bombardment with energetic ions is a non-equilibrium process which can result in intriguing near-surface property changes. This review initially examines the basic ion-solid interaction processes and outlines how such processes can lead to the modification of the composition, structure and surface topography of materials. Ion implantation has been exploited in widely diverse fields both as a powerful research tool for investigating solid state material processes and properties, and as a means of controllably modifying the electrical, physical, chemical, mechanical and optical properties of solid surfaces. These aspects receive major attention in this review which attempts to provide a balanced overview of the impact of ion implantation on solid state science and technology. In particular, special emphasis is given to implantation processes and applications in semiconductors which have received an enormous amount of attention in recent years, stimulated no doubt by the strong technological driving forces within the microelectronics industry. Ion bombardment processes and interesting property changes in metals are also discussed, and a selection of important technological applications is given. Finally, an overview of more recent investigations and applications is presented, including ion implantation into insulators and polymers, insight into crystal growth processes, adhesion of thin films to substrates, and research into ion bombardment of ices which has astrophysical significance.

https://iopscience.iop.org/article/10.1088/0034-4885/49/5/001/pdf

Materials modification with ion beams

Recent work has suggested that non-crystalline surface layer alloys can be formed in certain metals by ion implantation at large doses. The mechanism responsible for the ‘amorphization’ is thought ...

A microstructural study of some amorphous transition metal-metalloid surface alloys formed by ion implantation

Ion implantation and surface modification in tribology

Formation of compounds by metalloid ion implantation in iron

The phase composition of aluminium films after bombardment with boron, carbon, nitrogen, phosphorus, and arsenic ions is investigated by the electron-diffraction method. It is shown that in all the cases except of bombardment with B+ ions the known compounds of aluminium with the indicated species are formed. The phase formed as a result of B+ bombardment could not be identified with the known aluminiumborides. It is shown that the texture of the formed phases is determined by the texture of the initial aluminium films indicating the epitaxial (or endotaxial) character of growth of these phases. In some cases AIP and AlAs phases are formed in an amorphous state. This is explained by insufficient substrate temperature for the crystallization or by amorphization under ion beam action. It is further shown that at bombardment of α-iron films with C+ ions ϵ-carbide is formed which after annealing at T ≧ 300 °C transforms into cementite.



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Phase transformations at bombardment of Al and Fe polycrystalline films with B+, C+, N+, P+, and As+ ions

A new method of synthesizing compounds has recently been developed, namely the bombardment of solid targets with ions of energy above 10 keV. This is called ion-beam synthesis. The ions are implanted in the target at a certain depth, usually some hundreds or thousands of angstroms. The consequent radiation damage (atomic displacement and excitation of thermal vibrations) results in conditions under which new phases may be produced [1].

V. P. Lesnikov

Papers

Phase transformations at bombardment of Al and Fe polycrystalline films with B+, C+, N+, P+, and As+ ions

Formation and Growth of SiC in Carbon Ion Bombardment of Silicon