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V. V. Pan'ko

Researcher at Uzhhorod National University

Publications -  26
Citations -  349

V. V. Pan'ko is an academic researcher from Uzhhorod National University. The author has contributed to research in topics: Absorption edge & Absorption (electromagnetic radiation). The author has an hindex of 12, co-authored 26 publications receiving 331 citations.

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The effect of temperature and pressure on the optical absorption edge in Cu6PS5X crystals

TL;DR: In this article, the authors studied the absorption edge of monocrystalline Cu6PS5X (X=Cl, Br, I) superionic ferroelastics in the 77 −303 K temperature range and the mechanisms of exciton-phononon interactions resulting in exponential absorption edges and Urbach tails were analyzed.
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Influence of compositional disorder on optical absorption processes in Cu 6 P(S 1− x Se x ) 5 I crystals

TL;DR: In this article, the fundamental absorption edge of Cu6P(S 0.6Se0.4)5I and Cu6Ps(S 1−xSex)1.5I was studied in the 77-320 K temperature range where no phase transitions were revealed by optical techniques.
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Electrical and optical absorption studies of Cu7GeS5I fast-ion conductor

TL;DR: In this paper, the influence of different types of disordering on the Urbach absorption edge and electron-phonon interaction parameters were calculated, discussed and compared with the same parameters in Cu 7 GeS 5 I, Cu 6 P X 5 I (X =S,Se) and Ag 7 Ge X 5I (X,S) compounds.
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Fundamental optical absorption edge and exciton–phonon interaction in Cu6PS5Br superionic ferroelastic

TL;DR: In this article, the absorption edge of monocrystalline Cu 6 PS 5 Br was studied in the 4.2-505 K temperature range and two types of structural disorder affecting the optical absorption tail were studied.
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Preparation, electric conductivity and dielectrical properties of Cu6PS5I-based superionic composites

TL;DR: In this paper, the effect of differences in the composite production technology on the temperature of a second-order phase transition in the superionic phase, values of electrical conductivity, activation energy and dielectric permittivity are shown.