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Vencislav Cekov Valchev

Researcher at Technical University of Varna

Publications -  79
Citations -  1006

Vencislav Cekov Valchev is an academic researcher from Technical University of Varna. The author has contributed to research in topics: Inductor & Transformer. The author has an hindex of 12, co-authored 79 publications receiving 888 citations. Previous affiliations of Vencislav Cekov Valchev include Ghent University.

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Inductors and Transformers for Power Electronics

TL;DR: In this paper, the authors present a 2D model for Eddy Current Losses in Round Wires and a 1-D model of Ferrite cores. But they do not consider the effect of parasitic capacitance on the performance of the Ferrite core.
Proceedings ArticleDOI

Measurement and loss model of ferrites with non-sinusoidal waveforms

TL;DR: In this paper, the usual data of commercial ferrite grades are given for sinusoidal waveforms, although the voltage in the typical applications in power electronics resembles to square waves.
Proceedings ArticleDOI

Improved approximation for fringing permeances in gapped inductors

TL;DR: In this article, the authors proposed an improved analytical approximation for fringing permeance calculation for the most usual field patterns, extended form 2D to 3D giving analytical solutions for corner effects, thus providing a better accuracy of the approximation.
Journal ArticleDOI

Nanocrystalline magnetic materials versus ferrites in power electronics

TL;DR: In this article, the magnetic properties and global operating parameters of nanocrystalline and ferrite materials are compared and it is figured out that because of their marvelous magnetic properties the nanocrystine materials are the future magnetic materials in power electronics.
Journal ArticleDOI

Ferrite losses of cores with square wave voltage and dc bias

TL;DR: In this article, a model including wide ranges in amplitude, frequency, and also dc bias is proposed to test and model the losses of the actual ferrite cores under the same conditions as in the actual power application, and experiments were carried out at different induction levels and dc bias currents.