V
Vittorio Romano
Researcher at University of Catania
Publications - 192
Citations - 2578
Vittorio Romano is an academic researcher from University of Catania. The author has contributed to research in topics: Boltzmann equation & Graphene. The author has an hindex of 29, co-authored 181 publications receiving 2361 citations. Previous affiliations of Vittorio Romano include University of Salerno & University of Calabar.
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Journal ArticleDOI
Kluyveromyces lactis cells entrapped in Ca-alginate beads for the continuous production of a heterologous glucoamylase
Elisabetta de Alteriis,Giovanni Silvestro,Massimo Poletto,Vittorio Romano,Daniele Capitanio,Concetta Compagno,Palma Parascandola +6 more
TL;DR: A mathematical model, which takes into account substrate transfer limitations throughout the gel, has been developed and the effective lactose diffusivity was related to the bead reactive efficiency by means of the Thiele modulus.
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A full coupled drift-diffusion-Poisson simulation of a GFET
Giovanni Nastasi,Vittorio Romano +1 more
TL;DR: The critical issue in a GFET is the difficulty of fixing the off state which requires an accurate calibration of the gate voltages which makes GFET not the optimal device for post-silicon nanoscale electron technology.
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A hydrodynamical model for covalent semiconductors with a generalized energy dispersion relation
TL;DR: In this paper, the authors present a macroscopical model for charge transport in compound semiconductors to make use of analytic ellipsoidal approximations for the energy dispersion relationships in the neighbours of the lowest minima of the conduction bands.
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Semiconductor device design using the BiMADS algorithm
TL;DR: It is proved that BiMADS is able to locate promising solutions with a tight budget of objective function evaluations, which makes it suitable for large-scale industrial applications.
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Asymptotic stability of the equilibrium state for the hydrodynamical model of charge transport in semiconductors based on the maximum entropy principle
TL;DR: Asymptotic stability of the equilibrium state for the balance equations of charge transport in semiconductors based on the maximum entropy principle [Continuum Mech. Thermodyn. 11 (1999) 307] is proved in the nonlinear approximation for a typical one dimensional problem.