V
Vittorio Romano
Researcher at University of Catania
Publications - 192
Citations - 2578
Vittorio Romano is an academic researcher from University of Catania. The author has contributed to research in topics: Boltzmann equation & Graphene. The author has an hindex of 29, co-authored 181 publications receiving 2361 citations. Previous affiliations of Vittorio Romano include University of Salerno & University of Calabar.
Papers
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Electron-phonon hydrodynamical model for semiconductors
Vittorio Romano,Marcin Zwierz +1 more
TL;DR: In this article, a hydrodynamical model for the electron-phonon system in semiconductor was developed by closing the moment system arising from the coupled Boltzmann equations for electrons and phonons with the maximum entropy principle.
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Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle
TL;DR: A nanoscale double-gate MOSFET is simulated with an energy-transport subband model for semiconductors including the effects of non-parabolicity by means of the Kane dispersion relation to form a system of nonlinear parabolic partial differential equations.
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Experimental evaluation and modeling of thermal conductivity of tetrafunctional epoxy resin containing different carbon nanostructures
TL;DR: In this paper, the thermal conductivity behavior of epoxy nanocomposites containing different types of nanofillers, such as 1-D Multiwall Carbon Nanotubes (MWCNTs) and 2-D predominant shape of Exfoliated Graphite nanoparticles (EG) at loading level from 0.25 to 3% wt.
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A hydrodynamical model for holes in silicon semiconductors: The case of non-parabolic warped bands
Giovanni Mascali,Vittorio Romano +1 more
TL;DR: This paper describes the motion of holes in silicon by also taking into account the non-parabolicity of the heavy and light bands, based on the moment method and the closure of the system of equations is obtained by using the maximum entropy principle.
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Si and GaAs mobility derived from a hydrodynamical model for semiconductors based on the maximum entropy principle
Giovanni Mascali,Vittorio Romano +1 more
TL;DR: In this article, a hydrodynamical model for electron transport in Si and GaAs semiconductors, free of any fitting parameter, has been formulated and compared with those given by the Caughey-Thomas formula and the validity of the Einstein relation.