scispace - formally typeset
V

Vittorio Romano

Researcher at University of Catania

Publications -  192
Citations -  2578

Vittorio Romano is an academic researcher from University of Catania. The author has contributed to research in topics: Boltzmann equation & Graphene. The author has an hindex of 29, co-authored 181 publications receiving 2361 citations. Previous affiliations of Vittorio Romano include University of Salerno & University of Calabar.

Papers
More filters
Journal ArticleDOI

Electron-phonon hydrodynamical model for semiconductors

TL;DR: In this article, a hydrodynamical model for the electron-phonon system in semiconductor was developed by closing the moment system arising from the coupled Boltzmann equations for electrons and phonons with the maximum entropy principle.
Journal ArticleDOI

Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle

TL;DR: A nanoscale double-gate MOSFET is simulated with an energy-transport subband model for semiconductors including the effects of non-parabolicity by means of the Kane dispersion relation to form a system of nonlinear parabolic partial differential equations.
Journal ArticleDOI

Experimental evaluation and modeling of thermal conductivity of tetrafunctional epoxy resin containing different carbon nanostructures

TL;DR: In this paper, the thermal conductivity behavior of epoxy nanocomposites containing different types of nanofillers, such as 1-D Multiwall Carbon Nanotubes (MWCNTs) and 2-D predominant shape of Exfoliated Graphite nanoparticles (EG) at loading level from 0.25 to 3% wt.
Journal ArticleDOI

A hydrodynamical model for holes in silicon semiconductors: The case of non-parabolic warped bands

TL;DR: This paper describes the motion of holes in silicon by also taking into account the non-parabolicity of the heavy and light bands, based on the moment method and the closure of the system of equations is obtained by using the maximum entropy principle.
Journal ArticleDOI

Si and GaAs mobility derived from a hydrodynamical model for semiconductors based on the maximum entropy principle

TL;DR: In this article, a hydrodynamical model for electron transport in Si and GaAs semiconductors, free of any fitting parameter, has been formulated and compared with those given by the Caughey-Thomas formula and the validity of the Einstein relation.