http://sces.phys.utk.edu/mostcited/mc1_1114.pdf

Colossal Magnetoresistant Materials: The Key Role of Phase Separation

Brownian motors: noisy transport far from equilibrium

Dielectric polymers with high dipole density have the potential to achieve very high energy density, which is required in many modern electronics and electric systems. We demonstrate that a very high energy density with fast discharge speed and low loss can be obtained in defect-modified poly(vinylidene fluoride) polymers. This is achieved by combining nonpolar and polar molecular structural changes of the polymer with the proper dielectric constants, to avoid the electric displacement saturation at electric fields well below the breakdown field. The results indicate that a very high dielectric constant may not be desirable to reach a very high energy density.

http://science.sciencemag.org/content/sci/313/5785/334.full.pdf

A Dielectric Polymer with High Electric Energy Density and Fast Discharge Speed

This review covers important advances in recent years in the physics of thin-film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin-film form. The authors introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices. Following this the review covers the enormous progress that has been made in the first-principles computational approach to understanding ferroelectrics. The authors then discuss in detail the important role that strain plays in determining the properties of epitaxial thin ferroelectric films. Finally, this review ends with a look at the emerging possibilities for nanoscale ferroelectrics, with particular emphasis on ferroelectrics in nonconventional nanoscale geometries.

/pdf/physics-of-thin-film-ferroelectric-oxides-3zmqphtpv1.pdf

Physics of thin-film ferroelectric oxides

Band bending in semiconductors: chemical and physical consequences at surfaces and interfaces.

Ultrathin crystalline films offer the possibility of exploring phase transitions in the crossover region between two and three dimensions. Second-order ferromagnetic phase transitions have been observed in monolayer magnetic films1,2, where surface anisotropy energy stabilizes the two-dimensional ferromagnetic state at finite temperature3. Similarly, a number of magnetic materials have magnetic surface layers that show a second-order ferromagnetic–paramagnetic phase transition with an increased Curie temperature4. Ferroelectricity is in many ways analogous to ferromagnetism, and bulk-like ferroelectricity and finite-size modifications of it have been seen in nanocrystals as small as 250 A in diameter5, in perovskite films 100 A thick6 and in crystalline ferroelectric polymers as thin as 25 A (7-10). But these results can be interpreted as bulk ferroelectricity suppressed by surface depolarization energies, and imply that the bulk transition has a minimum critical size11,12,13. Here we report measurements of the ferroelectric transition in crystalline films of a random copolymer of vinylidene fluoride and trifluoroethylene just 10 A (two monolayers) thick. We see a first-order ferroelectric phase transition with a transition temperature nearly equal to the bulk value, even in these almost two-dimensional films. In addition, we see a second first-order transition at a lower temperature, which seems to be associated with the surface layers only. The near-absence of finite-size effects on the bulk transition implies that these films must be considered as two-dimensional ferroelectrics.

/pdf/two-dimensional-ferroelectric-films-4asku9bxo3.pdf

Two-dimensional ferroelectric films

The Landau-Ginzburg theory of ferroelectricity predicts the intrinsic coercive field for polarization reversal, but the observed extrinsic coercive field is always much smaller as a result of nucleation, dynamic processes not covered by the static theory. We have realized the intrinsic coercive field for the first time, in two-dimensional Langmuir-Blodgett polymer films as thin as 1 nm. The measured coercive field is in good agreement with the theoretical intrinsic value, exhibits the expected dependence on temperature, and does not depend on thickness below 15 nm.

/pdf/intrinsic-ferroelectric-coercive-field-3b3tx8aiyv.pdf

Intrinsic ferroelectric coercive field

The theory and the experimental characteristics of the bulk photovoltaic effect in ferroelectric and piezoelectric crystals first observed at the Institute of Crystallography have been reviewed. I dedicate this review to the memory of B.K. Vainshtein whose help in performing these works was really inestimable.

Bulk photovoltaic effect in noncentrosymmetric crystals

The voltage generated in a noncentrosymmetric crystal due to the bulk photovoltaic effect (BPE) can greatly exceed the energy gap, however, the light energy conversion efficiency is extremely low. Here we show that the BPE is remarkably enhanced in the case of thin films. The measurements of the BPE in heteroepitaxial single domain ferroelectric ${\mathrm{BaTiO}}_{3}$ thin films reveal the enhancement of both photoinduced electric field and conversion efficiencies of the BPE by more than 4 orders of magnitude. Besides the fundamental aspect, our results indicate the potential for the use of the BPE in photovoltaic applications.

Giant bulk photovoltaic effect in thin ferroelectric BaTiO 3 films

The investigation of the finite-size effect in ferroelectric crystals and films has been limited by the experimental conditions. The smallest demonstrated ferroelectric crystals had a diameter of ~200 A and the thinnest ferroelectric films were ~200 A thick, macroscopic sizes on an atomic scale. Langmuir–Blodgett deposition of films one monolayer at a time has produced high quality ferroelectric films as thin as 10 A, made from polyvinylidene fluoride and its copolymers. These ultrathin films permitted the ultimate investigation of finite-size effects on the atomic thickness scale. Langmuir–Blodgett films also revealed the fundamental two-dimensional character of ferroelectricity in these materials by demonstrating that there is no so-called critical thickness; films as thin as two monolayers (1 nm) are ferroelectric, with a transition temperature near that of the bulk material. The films exhibit all the main properties of ferroelectricity with a first-order ferroelectric–paraelectric phase transition: polarization hysteresis (switching); the jump in spontaneous polarization at the phase transition temperature; thermal hysteresis in the polarization; the increase in the transition temperature with applied field; double hysteresis above the phase transition temperature; and the existence of the ferroelectric critical point. The films also exhibit a new phase transition associated with the two-dimensional layers.

/pdf/two-dimensional-ferroelectrics-qvf6o93g34.pdf

Vladimir M. Fridkin

Papers

Two-dimensional ferroelectric films

Intrinsic ferroelectric coercive field

Bulk photovoltaic effect in noncentrosymmetric crystals

Giant bulk photovoltaic effect in thin ferroelectric BaTiO 3 films

Two-dimensional ferroelectrics