The last decade witnessed significant progress in angle-resolved photoemission spectroscopy (ARPES) and its applications. Today, ARPES experiments with 2-meV energy resolution and $0.2\ifmmode^\circ\else\textdegree\fi{}$ angular resolution are a reality even for photoemission on solids. These technological advances and the improved sample quality have enabled ARPES to emerge as a leading tool in the investigation of the high-${T}_{c}$ superconductors. This paper reviews the most recent ARPES results on the cuprate superconductors and their insulating parent and sister compounds, with the purpose of providing an updated summary of the extensive literature. The low-energy excitations are discussed with emphasis on some of the most relevant issues, such as the Fermi surface and remnant Fermi surface, the superconducting gap, the pseudogap and $d$-wave-like dispersion, evidence of electronic inhomogeneity and nanoscale phase separation, the emergence of coherent quasiparticles through the superconducting transition, and many-body effects in the one-particle spectral function due to the interaction of the charge with magnetic and/or lattice degrees of freedom. Given the dynamic nature of the field, we chose to focus mainly on reviewing the experimental data, as on the experimental side a general consensus has been reached, whereas interpretations and related theoretical models can vary significantly. The first part of the paper introduces photoemission spectroscopy in the context of strongly interacting systems, along with an update on the state-of-the-art instrumentation. The second part provides an overview of the scientific issues relevant to the investigation of the low-energy electronic structure by ARPES. The rest of the paper is devoted to the experimental results from the cuprates, and the discussion is organized along conceptual lines: normal-state electronic structure, interlayer interaction, superconducting gap, coherent superconducting peak, pseudogap, electron self-energy, and collective modes. Within each topic, ARPES data from the various copper oxides are presented.

https://arxiv.org/pdf/cond-mat/0208504.pdf

Angle-resolved photoemission studies of the cuprate superconductors

The discovery of the photoelectric effect by Heinrich Hertz in 1887 set the foundation for over 125 years of hot carrier science and technology. In the early 1900s it played a critical role in the development of quantum mechanics, but even today the unique properties of these energetic, hot carriers offer new and exciting opportunities for fundamental research and applications. Measurement of the kinetic energy and momentum of photoejected hot electrons can provide valuable information on the electronic structure of materials. The heat generated by hot carriers can be harvested to drive a wide range of physical and chemical processes. Their kinetic energy can be used to harvest solar energy or create sensitive photodetectors and spectrometers. Photoejected charges can also be used to electrically dope two-dimensional materials. Plasmon excitations in metallic nanostructures can be engineered to enhance and provide valuable control over the emission of hot carriers. This Review discusses recent advances in the understanding and application of plasmon-induced hot carrier generation and highlights some of the exciting new directions for the field.

Plasmon-induced hot carrier science and technology

We report calculations of electron inelastic mean free paths (IMFPs) of 50–2000 eV electrons for a group of 14 organic compounds: 26-n-paraffin, adenine, β-carotene, bovine plasma albumin, deoxyribonucleic acid, diphenylhexatriene, guanine, kapton, polyacetylene, poly(butene-1-sulfone), polyethylene, polymethylmethacrylate, polystyrene and poly(2-vinylpyridine). The computed IMFPs for these compounds showed greater similarities in magnitude and in the dependences on electron energy than was found in our previous calculations for groups of elements and inorganic compounds (Papers II and III in this series). Comparison of the IMFPs for the organic compounds with values obtained from our predictive IMFP formula TPP-2 showed systematic differences of ∼40%. These differences are due to the extrapolation of TPP-2 from the regime of mainly high-density elements (from which it had been developed and tested) to the low-density materials such as the organic compounds. We analyzed the IMFP data for the groups of elements and organic compounds together and derived a modified empirical expression for one of the parameters in our predictive IMFP equation. The modified equation, denoted TPP-2M, is believed to be satisfactory for estimating IMFPs in elements, inorganic compounds and organic compounds.

Calculations of electron inelastic mean free paths. III. Data for 15 inorganic compounds over the 50–2000 eV range

http://xrm.phys.northwestern.edu/research/pdf_papers/2004/egerton_micron_2004.pdf

Radiation damage in the TEM and SEM.

We report calculations of electron inelastic mean free paths (IMFPs) for 50–2000 eV electrons in a group of 27 elements (C, Mg, Al, Si, Ti, V, Cr, Fe, Ni, Cu, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Ta, W, Re, Os, Ir, Pt, Au and Bi). This work extends our previous calculations (Surf. Interface Anal. 11, 57 (1988)) for the 200–2000 eV range. Substantial variations were found in the shapes of the IMFP versus energy curves from element to element over the 50–2000 eV range and we attribute these variations to the different inelastic scattering properties of each material. Our calculated IMFPs wee fitted to a modified form of the Bethe equation for inelastic electron scattering in matter; this equation has four parameters. These four parameters could be empirically related to several material parameters for our group of elements (atomic weight, bulk density and number of valence electron per atom). IMFPs and those initially calculated was 13%. The modified Bethe equation and our expressions for the four parameters can therefore be used to estimate IMFPs in other materials. The uncertainties in the algorithm used for our IMFP calculation are difficult to estimate but are believed to be largely systematic. Since the same algorithm has been used for calculating IMFPs, our predictive IMFP formula is considered to be particularly useful for predicting the IMFP dependence on energy in the 50–2000 eV range and the material dependence for a given energy.

Calculations of electorn inelastic mean free paths. II. Data for 27 elements over the 50–2000 eV range

A compilation is presented of all published measurements of electron inelastic mean free path lengths in solids for energies in the range 0–10 000 eV above the Fermi level. For analysis, the materials are grouped under one of the headings: element, inorganic compound, organic compound and adsorbed gas, with the path lengths each time expressed in nanometers, monolayers and milligrams per square metre. The path lengths are vary high at low energies, fall to 0.1–0.8 nm for energies in the range 30–100 eV and then rise again as the energy increases further. For elements and inorganic compounds the scatter about a ‘universal curve’ is least when the path lengths are expressed in monolayers, λm. Analysis of the inter-element and inter-compound effects shows that λm is related to atom size and the most accuratae relations are λm = 538E−2+0.41(aE)1/2 for elements and λm=2170E−2+0.72(aE)1/2 for inorganic compounds, where a is the monolayer thickness (nm) and E is the electron energy above the Fermi level in eV. For organic compounds λd=49E−2+0.11E1/2 mgm−2. Published general theoretical predictions for λ, valid above 150 eV, do not show as good correlations with the experimental data as the above relations.

Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solids

In surface analysis today many commercial instruments are operated through a computer. This computer is also used for processing the captured data, using routines from a built-in set of options for peak synthesis, peak deconvolution, background subtraction, peak area measurement, quantification in various levels of sophistication, mapping, depth profile presentation, smoothing, differentiation and a host of other functions. However, many analysts wish to process their data on another computer in their own particular way using programs written to their specification and under their full control. They need to encode the data in the data-capture computer into a form suitable for transmission then decode it into the form required in the receiving computer. A standard format for the transferred data would clearly lead to economies in the number of programs required to effect the encoding and decoding.

To meet the above requirement, as a result of a series of iterative discussions over the last three years, first within the UKESCA Users Group and then with the VAMAS National Representatives and users and manufacturers within the VAMAS Community as well as the ASTM Committee E-42.11, we have produced a Surface Chemical Analysis Standard Data Transfer Format defined in a standard metalanguage. This Format is intended to be used by those wishing to transfer data from computer to computer via parallel interfaces or via serial interfaces over direct wire, telephone line, local area network or other communications link. It is suitable for AES, EDX, FABMS, ISS, SIMS, SNMS, UPS, XPS, XRF and similar analytical methods. It covers elemental maps, depth profiles and sequences of data resulting from a variety of experiments. Thus the application of the Format is very general.

W. A. Dench

Papers

Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solids

VAMAS Surface chemical analysis standard data transfer format with skeleton decoding programs

Signals, noise, reference signal‐to‐noise ratios and a standard figure‐of‐merit for auger electron spectrometers