W
W. Benz
Researcher at Fraunhofer Society
Publications - 9
Citations - 141
W. Benz is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Laser & Spontaneous emission. The author has an hindex of 5, co-authored 9 publications receiving 141 citations.
Papers
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Journal ArticleDOI
Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In/sub 0.35/Ga/sub 0.65/As-GaAs multiple-quantum-well lasers
S. Weisser,Eric C. Larkins,K. Czotscher,W. Benz,J. Daleiden,Ignacio Esquivias,J. Fleissner,John D. Ralston,Beatriz Romero,R.E. Sah,A. Schonfelder,J. Rosenzweig +11 more
TL;DR: In this article, the authors demonstrate record direct modulation bandwidths from MBE-grown Insub 035/Ga/sub 065/As-GaAs multiple-quantum-well lasers with undoped active regions and with the upper and lower cladding layers grown at different growth temperatures.
Journal ArticleDOI
Improved performance from pseudomorphic In y Ga/sub 1-y/As-GaAs MQW lasers with low growth temperature Al x Ga/sub 1-x/As short-period superlattice cladding
Eric C. Larkins,W. Benz,Ignacio Esquivias,W. Rothemund,M. Baeumler,S. Weisser,A. Schonfelder,J. Fleissner,W. Jantz,J. Rosenzweig,John D. Ralston +10 more
TL;DR: In this article, the threshold current densities (J/sub th/) were /spl sim/3 times smaller for the AlGaAs cladding layers were grown at 620/spl deg/C.
Journal ArticleDOI
Uncooled high-temperature (130/spl deg/C) operation of InGaAs-GaAs multiple quantum-well lasers at 20 Gb/s
K. Czotscher,Eric C. Larkins,S. Weisser,W. Benz,J. Daleiden,J. Fleissner,M. Maier,John D. Ralston,J. Rosenzweig +8 more
TL;DR: In this paper, the Fabry-Perot high-speed short-cavity InGaAs-GaAs multiple-quantum-well laser operating at 1.1-/spl mu/m wavelength was described.
Proceedings ArticleDOI
37 GHz direct modulation bandwidth in short-cavity InGaAs/GaAs MQW lasers with C-doped active regions
S. Weisser,Eric C. Larkins,Konrad Czotscher,W. Benz,J. Daleiden,J. Fleissner,M. Maier,John D. Ralston,Beatriz Romero,A. Schonfelder,J. Rosenzweig +10 more
TL;DR: In this article, the InGaAs/GaAs MQW laser with a similar epilayer structure, but with the Be-doping in the core replaced by carbon (C), resulting in a modulation-doped core region.
Journal ArticleDOI
Fabrication of dry-etched mirrors in GaAs-based and InP-based lasers using chemically assisted ion-beam etching at low temperatures
TL;DR: In this article, the authors have fabricated dry-etched mirrors in high-speed InGaAs/InP/AlGaAs pseudomorphic multiple quantum well ridge waveguide (QWG) laser at 60°C and 5°C using enhanced chemically assisted ion-beam etching (CAIBE) technique.