Millimeter-wave voltage-controlled oscillators (VCOs) are presented which are fully integrated in a SiGe bipolar production technology. The low-cost differential circuits have been designed and optimized for low phase noise and wide tuning range. As an example, by varying the bias voltage of the on-chip varactor, the oscillation frequency can be changed from 36 to 46.9 GHz (i.e., by 26%). In this wide frequency range, phase noise between -107 and -110dBc/Hz at 1-MHz offset frequency and single-ended voltage swing of about 0.95V/sub pp/ /spl plusmn/10% (differential: 1.9V/sub pp/) were measured. The circuit consumes 280mW at -5.5-V supply voltage. The high oscillation frequency and low phase noise at wide tuning range are record values for fully integrated oscillators in Si-based technologies. The basic oscillator was then extended by a cascode stage as an output buffer. Now the VCO performance is no longer degraded if nonperfectly terminated transmission lines are driven. Thus, the chip can be mounted in a low-cost socket; however, at the cost of increased phase noise and power consumption.

Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology

A 120-Gb/s optical link (12 channels at 10 Gb/s/ch for both a transmitter and a receiver) has been demonstrated. The link operated at a bit-error rate of less than 10/sup -12/ with all channels operating and with a total fiber length of 316 m, which comprises 300 m of next-generation (OM-3) multimode fiber (MMF) plus 16 m of standard-grade MMF. This is the first time that a parallel link with this bandwidth at this per-channel rate has ever been demonstrated. For the transmitter, an SiGe laser driver was combined with a GaAs vertical-cavity surface-emitting laser (VCSEL) array. For the receiver, the signal from a GaAs photodiode array was amplified by a 12-channel SiGe receiver integrated circuit. Key to the demonstration were several custom testing tools, most notably a 12-channel pattern generator. The package is very similar to the commercial parallel modules that are available today, but the per-channel bit rate is three times higher than that for the commercial modules. The new modules demonstrate the possibility of extending the parallel-optical module technology that is available today into a distance-bandwidth product regime that is unattainable for copper cables.

120-Gb/s VCSEL-based parallel-optical interconnect and custom 120-Gb/s testing station

We demonstrate SiGe:C pnp HBTs in a complementary bipolar CMOS flow with f/sub T//f/sub max/ values of 80 GHz/120 GHz at BV/sub CEO/ = 26 V and a ring oscillator delay of 89 ps The simultaneously fabricated npn HBTs sustain no significant performance loss compared to the npn-only BiCMOS, confirmed by f/sub T//f/sub max/ values of 180 GHz/185 GHz and a ring oscillator delay of 46 ps A pnp-only BiCMOS flow produces peak f/sub T//f/sub max/ values for pnp devices of 115 GHz/115 GHz The high speed performance of the pnp transistors surpasses the best reported values of this transistor type substantially

A complementary BiCMOS technology with high speed npn and pnp SiGe:C HBTs

A radio frequency power amplifier for 4.8-5.7 GHz has been realized in a 0.35-/spl mu/m SiGe bipolar technology. The balanced two-stage push-pull power amplifier uses two on-chip transformers as input-balun and for interstage matching. Further, it uses three coils for the integrated LC-output balun and the RF choke. Thus, the power amplifier does not require any external components. At 1.0-V, 1.5-V, and 2.4-V supply voltages, output powers of 17.7 dBm, 21.6 dBm, and 25 dBm are achieved at 5.3 GHz. The respective power-added efficiencies (PAE) are 15%, 22%, and 24%. The small-signal gain is 26 dB. The output 1-dB compression point at 2.4 V is 22 dBm with a PAE of 14%.

A fully integrated 5.3-GHz 2.4-V 0.3-W SiGe bipolar power amplifier with 50-/spl Omega/ output

Multipurpose VCOs with wide tuning range and oscillation frequencies up to 74 GHz (on wafer) and 69 GHz (mounted chip, with output buffer), respectively, have been fully integrated in a commercial SiGe production technology. To the best of the authors' knowledge these are record values for commercially available Si-based technologies, despite the moderate transistor f/sub T/ (62 GHz). The oscillation frequency can easily be dropped down to 41.5 GHz by cutting interconnection lines in the upper metallization layer. The phase noise obtained depends on the frequency range chosen and is sufficiently low for the intended applications.

Wide-band VCOs in SiGe production technology operating up to about 70 GHz

This paper presents the key features of Infineons 75 GHz .SiGe Bipolar production

http://ieeexplore.ieee.org/iel5/10061/32274/01505453.pdf

W. Klein

Papers

75 GHz Bipolar Production Technology for the 21st Century