In this paper, a design methodology for modelling and simulation of monolithic integration of low power rectifier for solid state lighting application is presented. The power conversion is built based on schottky diode fabricated in a standard BiCMOS process. The process simulation is done by using TSUPREME4 to study the doping profiles and junction depth of the standard BiCMOS fabrication steps. The modelling and design of the schottky diode for rectifier design is then made with inputs from the process simulation tool. COMSOL Multiphysics environment is used to couple both semiconductor module and circuit analysis steps. The simulated IV characteristics of the schottky diode are used to build the spice model parameters of the fabricated device. A model for monolithically integrated rectifier application and analysis is presented and analysed.

Modeling and simulation of monolithic integration of rectifiers for solid state lighting applications

Bipolar transistors are well known for their high current driving capability and current gains, while CMOS transistors are dominant in the integrated circuit market because of their low power consumption and small size advantage. The combination of both types of transistor on the same chip provides a high performance circuit with a high packing density. In this work, 0.5 /spl mu/m BiCMOS technology is fully utilized to realize silicon bipolar transistors with optimized performance. Preliminary electrical results are presented on bipolar transistors fabricated for the first time in Malaysia. Significant improvements in electrical device performance can be achieved by optimizing the emitter drive-in temperature and choice of annealing system.

W.S.W. Adini

Papers

Fabrication and electrical characterization of silicon bipolar transistors in a 0.5-/spl mu/m based BiCMOS technology

Preparation and evaluation of Zn(O,S) thin film layer by sulfurization method