We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.

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Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

https://cyberleninka.org/article/n/323323.pdf

Production and processing of graphene and 2d crystals

Following the past seventeen-year developmental path in the research of semiconductor superlattices and quantum wells, significant milestones are presented with emphasis on experimental investigations in the device physics of reduced dimensionality performed in cooperation with the materials science of heteroepitaxial growth.

A bird's-eye view on the evolution of semiconductor superlattices and quantum wells

The metalorganic chemical vapor deposition (MOCVD) of epitaxial III‐V semiconductor alloys on III‐V substrates is reviewed in detail. The emphasis is placed on both practical and theoretical knowledge of the equipment and deposition process. The chemistry of the source alkyls and the dynamics of the transport process are discussed. The growth of the GaAs and AlxGa1−xAs systems are treated as prototypical examples (and the most studied) of the III‐V materials. Latter sections review InP, Ga1−xInxAs, and related alloys. Finally, the antimonide and the other systems are reviewed. Electronic and optical devices fabricated from MOCVD‐grown materials are used as examples of the capabilities of the growth technique.

Metalorganic chemical vapor deposition of III‐V semiconductors

MBE is a versatile technique for growing thin epitaxial structures made of semiconductors, metals or insulators [7.1] (see also the definition given in Sect. 6.1.3). What distinguishes MBE from previous vacuum deposition techniques is its significantly more precise control of the beam fluxes and growth conditions. Because of vacuum deposition, MBE is carried out under conditions far from thermodynamic equilibrium and is governed mainly by the kinetics of the surface processes occurring when the impinging beams react with the outermost atomic layers of the substrate crystal. This is in contrast to other epitaxial growth techniques, such as LPE or atmospheric pressure VPE, which proceed at conditions near thermodynamic equilibrium and are most frequently controlled by diffusion processes occurring in the crystallizing phase surrounding the substrate crystal.

Molecular Beam Epitaxy

A new epitaxial growth technique, chemical beam epitaxy (CBE), was demsonstrated and investigated with the growth of InP and GaAs. In this technique, all the sources were gaseous group III and group V alkyls. The In and Ga were derived by the pyrolysis of either trimethylindium or triethylindium and trimethylgallium or triethylgallium at the heated substrate surface, respectively. The As2 and P2 were obtained by thermal decomposition of triethylphosphine and trimethylarsine in contact with heated Ta or Mo at 950–1200 °C, respectively. Unlike conventional vapor phase epitaxy, in which the chemicals reach the substrate surface by diffusing through a stagnant carrier gas boundary layer above the substrate, the chemicals in CBE were admitted into a high vacuum growth chamber and impinged directly light of sight onto the heated substrate surface in the form of molecular beams. The beam nature of CBE resulted in efficient use of the impinging chemicals and allowed the utilization of mechanical shutters. A gas h...

W. T. Tsang

Papers

Chemical beam epitaxy of InP and GaAs