The interest in nanoscale materials stems from the fact that new properties are acquired at this length scale and, equally important, that these properties * To whom correspondence should be addressed. Phone, 404-8940292; fax, 404-894-0294; e-mail, mostafa.el-sayed@ chemistry.gatech.edu. † Case Western Reserve UniversitysMillis 2258. ‡ Phone, 216-368-5918; fax, 216-368-3006; e-mail, burda@case.edu. § Georgia Institute of Technology. 1025 Chem. Rev. 2005, 105, 1025−1102

Chemistry and properties of nanocrystals of different shapes.

The field of nanoparticle research has drawn much attention in the past decade as a result of the search for new materials. Size confinement results in new electronic and optical properties, possibly suitable for many electronic and optoelectronic applications. A characteristic feature of noble metal nanoparticles is the strong color of their colloidal solutions, which is caused by the surface plasmon absorption. This article describes our studies of the properties of the surface plasmon absorption in metal nanoparticles that range in size between 10 and 100 nm. The effects of size, shape, and composition on the plasmon absorption maximum and its bandwidth are discussed. Furthermore, the optical response of the surface plasmon absorption due to excitation with femtosecond laser pulses allowed us to follow the electron dynamics (electron−electron and electron−phonon scattering) in these metal nanoparticles. It is found that the electron−phonon relaxation processes in nanoparticles, which are smaller than t...

Spectral properties and relaxation dynamics of surface plasmon electronic oscillations in gold and silver nanodots and nanorods

Laser ablation of solid targets by 0.2–5000 ps Ti: Sapphire laser pulses is studied. Theoretical models and qualitative explanations of experimental results are presented. Advantages of femtosecond lasers for precise material processing are discussed and demonstrated.

Femtosecond, picosecond and nanosecond laser ablation of solids

12.2.2. Four-Wave Mixing (FWM) 4849 12.2.3. Dye Aggregation 4850 12.2.4. Optoelectronic Nanodevices 4850 12.3. Sensor 4851 12.3.1. Chemical Sensor 4851 12.3.2. Biological Sensor 4851 12.4. Catalysis 4852 13. Conclusion and Perspectives 4852 14. Abbreviations 4853 15. Acknowledgements 4854 16. References 4854 * Corresponding author E-mail: tpal@chem.iitkgp.ernet.in. † Raidighi College. § Indian Institute of Technology. 4797 Chem. Rev. 2007, 107, 4797−4862

Interparticle Coupling Effect on the Surface Plasmon Resonance of Gold Nanoparticles: From Theory to Applications

Electron and lattice dynamics following optical excitation of metals

High-intensity femtosecond laser pulses are used to induce non- equilibrium electron heating in gold metal. The thermal relaxation of the electronic distribution is studied through pump and continuum probe measurements of transient reflectivity. Measurements are performed for different heating-pulse fluences and probe-photon energies. The observed reflectivity line shape demonstrates the generation of nonequilibrium electron temperatures which cool to the lattice on a 2--3 ps time scale.

Femtosecond studies of nonequilibrium electronic processes in metals.

Femtosecond carrier dynamics in GaAs and AlGaAs thin films are studied by time-resolved pump-probe spectroscopy. Measurements are performed using identical pulses as well as a continuum probe. Observations of the ultrafast absorption saturation response are related to the excitation of the carriers into specific nonthermal distributions, to their rapid scattering out of these states, and to subsequent cooling of the quasi-thermal carrier distribution to the temperature of the lattice. A strong dependence of the initial scattering rates on the mole fraction of Al and the excess electron energy is observed. >

Femtosecond absorption saturation studies of hot carriers in GaAs and AlGaAs

Excited carrier dynamics in GaAs and Al.2Ga.8As are investigated using femtosecond pump and continuum probe techniques. Absorption saturation measurements provide evidence for transient spectral hole burning due to split-off as well as heavy and light hole valence to conduction band transitions. The initial nonthermal carrier distribution thermalizes and assumes a broad energy distribution on a femtosecond time scale.

Femtosecond hot carrier energy redistribution in GaAs and AlGaAs

The investigation of ultrafast carrier dynamics in GaAs is important for development of high-speed optoelectronic and electronic devices.

W. Z. Lin

Papers

Femtosecond studies of nonequilibrium electronic processes in metals.

Femtosecond absorption saturation studies of hot carriers in GaAs and AlGaAs

Femtosecond hot carrier energy redistribution in GaAs and AlGaAs

Femtosecond carrier thermalization in GaAs and AIGaAs