W
Wayne I. Kinney
Researcher at Micron Technology
Publications - 32
Citations - 513
Wayne I. Kinney is an academic researcher from Micron Technology. The author has contributed to research in topics: Semiconductor device & Memory cell. The author has an hindex of 12, co-authored 32 publications receiving 512 citations.
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Patent
Method for forming a capacitor with electrically interconnected construction
TL;DR: In this paper, a method of forming a capacitor includes, a) providing a node to which electrical connection to a capacitor is to be made; b) providing an electrically conductive first layer over the node; c) providing electrically insulative barrier second layer, the third layer comprising a material which is either electricallyconductive and resistant to oxidation, or forms an electrical conductive material upon oxidation.
Patent
Method for reverse programming of a flash EEPROM
TL;DR: In this paper, a method of erasing, programming, and verifying a flash electrically erasable programmable read-only memory where all cells are first erased to a high threshold voltage, preferably by simultaneous Fowler-Nordheim tunnelling, and then selected cells are programmed to a low threshold voltage using Fowler-nordheim tuning is presented.
Patent
Method of forming a capacitor plate and a capacitor incorporating same
TL;DR: In this paper, a method of forming a capacitor includes, a) providing a node to which electrical connection to a capacitor is to be made, b) providing an electrically conductive first layer over the node, c) providing the electrically insulative barrier second layer over first conductive layer, d) the third layer comprising a material which is either electricallyconductive and resistant to oxidation, or forms an electrical conductive material upon oxidation.
Patent
Memory cells, semiconductor device structures, memory systems, and methods of fabrication
TL;DR: In this paper, the magnetic regions within the memory cells include an alternating structure of magnetic sub regions and coupler sub regions, where coupler material of the coupler subsets antiferromagnetically couples neighboring magnetic subsets and effects or encourages a vertical magnetic orientation exhibited by the neighboring sub-regions.
Patent
Folded bit line ferroelectric memory device
Tyler A. Lowrey,Wayne I. Kinney +1 more
TL;DR: In this article, a reference voltage circuit is described, which includes a bit line and first and second word line reference transistors connected to the bit line to be turned on with a reference pulse simultaneously with the turning on of the word lines in the main memory circuit.