The present disclosure provides a method of improving a layer to layer overlay error by an electron beam lithography system. The method includes generating a smart boundary of two subfields at the first pattern layer and obeying the smart boundary at all consecutive pattern layers. The same subfield is exposed by the same electron beam writer at all pattern layers. The overlay error caused by the different electron beam at different layer is improved.

Smart subfield method for E-beam lithography

The present disclosure provides for many different embodiments of a charged particle beam data storage system and method. In an example, a method includes dividing a design layout into a plurality of units; creating a lookup table that maps each of the plurality of units to its position within the design layout and a data set, wherein the lookup table associates any repeating units in the plurality of units to a same data set; and exposing an energy sensitive layer to a charged particle beam based on the lookup table.

Electron beam data storage system and method for high volume manufacturing

A method of exposing a photomask substrate, provides an exposing method for correcting a loading effect generated when a photomask substrate is dry etched. Accordingly, a variation in line width caused by a loading effect generated due to the non-uniformity of a loading density is reduced by a method of performing correction exposure using a dose corresponding to the loading effect due to a desired pattern which is calculated from a relationship represented as the convolution of a Gaussian distribution and a loading density.

Method of correcting line width variation due to loading effect caused during etching of a photomask and recording medium formed according to the method

An apparatus for controlling a plasma etching process includes plasma control structure that can vary a size of a plasma flow passage, vary a speed of plasma flowing through the plasma flow passage, vary plasma concentration flowing through the plasma flow passage, or a combination thereof.

Apparatus And Method For Controlling Relative Particle Concentrations In A Plasma

Apparatus and Method For Controlling Relative Particle Speeds In A Plasma

A new method is provided for E-beam exposure. A new method is provided for variable shaped E-beam (VSB) and Gaussian laser and E-beam exposure systems. The conventional main pattern is, under the method of the invention involving VSB, surrounded on all sides by a dummy frame whereby the dummy frame limits the beam size of the exposure shots that are adjacent to the main pattern. All patterns that are created in this manner are therefore composites using the same exposure shot. This improves the CD uniformity of the pattern by reducing the shot linearity error for VSB exposure systems. For Gaussian beam exposure systems, the exposure shots are at times located exactly over the exposed figure. Typically, gray level is used to simulate the small figure, this however induces proximity effects. The method of the invention therefore also improves the proximity effect of the Gaussian beam exposure systems.

Using a dummy frame pattern to improve CD control of VSB E-beam exposure system and the proximity effect of laser beam exposure system and Gaussian E-beam exposure system

Wei-Zen Chou

Papers

Using a dummy frame pattern to improve CD control of VSB E-beam exposure system and the proximity effect of laser beam exposure system and Gaussian E-beam exposure system