Dielectric layers containing an atomic layer deposited hafnium oxide and an electron beam evaporated lanthanide oxide and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO 2 . Forming a layer of hafnium oxide by atomic layer deposition and forming a layer of a lanthanide oxide by electron beam evaporation, where the layer of hafnium oxide is adjacent and in contact with the layer of lanthanide, provides a dielectric layer with a relatively high dielectric constant as compared with silicon oxide. The dielectric can be formed as a nanolaminate of hafnium oxide and a lanthanide oxide.

Lanthanide oxide / hafnium oxide dielectric layers

A method for growing films for use in integrated circuits using atomic layer deposition and a subsequent converting step is described. In an embodiment, the subsequent converting step includes oxidizing a metal atomic layer to form a metal oxide layer. The atomic layer deposition and oxidation step are then repeated to produce a metal oxide layer having sufficient thickness for use as a metal oxide layer in an integrated circuit. The subsequent converting step, in an embodiment, includes converting the atomic deposition layer by exposing it to one of nitrogen to form a nitride layer, carbon to form a carbide layer, boron to form a boride layer, and fluorine to form a fluoride layer. Systems and devices for performing the method, semiconductor devices so produced, and machine readable media containing the method are also described.

Atomic layer deposition and conversion

Dielectric layers having an atomic layer deposited oxide containing titanium and zirconium and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO 2 . Pulsing a titanium-containing precursor onto a substrate, and pulsing a zirconium-containing precursor to form an oxide containing Zr and Ti by atomic layer deposition provides a dielectric layer with a relatively high dielectric constant as compared with silicon oxide. The pulsing of the titanium-containing precursor and the pulsing of the zirconium-containing precursor is controlled to provide a dielectric layer with a predetermined zirconium to titanium ratio. A zirconium-containing precursor to form the oxide containing Zr and Ti can include zirconium tertiary-butoxide.

Atomic layer deposited ZrTiO4 films

Integrated circuits, the key components in thousands of electronic and computer products, are generally built layer by layer on a silicon substrate. One common technique for forming layers is called chemical-vapor deposition (CVD.) Conventional CVD systems not only form layers that have non-uniform thickness, but also have large chambers that make the CVD process wasteful and slow. Accordingly, the inventor devised new CVD systems, methods, and apparatuses. One exemplary CVD system includes an outer chamber, a substrate holder, and a unique gas-distribution fixture. The fixture includes a gas-distribution surface having holes for dispensing a gas and a gas-confinement member that engages or cooperates with the substrate holder to form an inner chamber within the outer chamber. The inner chamber has a smaller volume than the outer chamber, which not only facilitates depositions of more uniform thickness, but also saves gas and speeds up the deposition process.

Methods, systems, and apparatus for uniform chemical-vapor depositions

Electronic apparatus and methods may include a hafnium tantalum oxynitride film on a substrate for use in a variety of electronic systems. The hafnium tantalum oxynitride film may be structured as one or more monolayers. The hafnium tantalum oxynitride film may be formed using atomic layer deposition. Metal electrodes may be disposed on a dielectric containing a hafnium tantalum oxynitride film.

Hafnium tantalum oxynitride high-k dielectric and metal gates

In a method for forming a trench capacitor a first layer of silicon oxide is deposited in a storage trench and a layer of silicon is deposited over the first layer by a chemical vapor deposition process. A layer of an oxidizable metal is deposited over the layer of silicon. The layer of silicon and the layer of the oxidizable metal are subsequently oxidized to form a layer of silicon oxide and metal oxide.

Method for increasing the capacitance in a storage trench

Method for increasing the capacitance in a storage trench and trench capacitor having increased capacitance

Increasing the capacity in a storage trench comprises depositing a first silicon oxide layer (4) in the trench; depositing a silicon layer (5) over the first layer to sufficiently cover the wall of the trench; and depositing a layer (6) containing an oxidizable metal. The silicon layer and the oxidizable metal layer are oxidized to form a layer containing a metal oxide and silicon oxide. An independent claim is also included for a trench capacitor comprising an inner wall covered with a silicon oxide layer which is covered with a metal oxide layer followed by a further silicon oxide layer. The remainder of the trench is filled with silicon. Preferred Features: Deposition is carried out by CVD or atomic layer deposition. The oxidizable metal is Ti, TiN, W, WN, Ta, TaN, WSi, TiSi or TaSi. Oxidation is carried out in an oxygen-containing atmosphere.

Increasing capacity in a storage trench comprises depositing a first silicon oxide layer in the trench, depositing a silicon layer over the first layer to sufficiently

Beim erfindungsgemasen Verfahren wird im Speichergraben (3) eine erste Schicht Siliziumoxid (4) und daruber eine Schicht Silizium (5) mittels chemical vapor deposition abgeschieden. In the method according to the invention comprises a first layer of silicon oxide (4) and above a silicon layer (5) by chemical vapor deposition is deposited in the storage trench (3). Uber der Schicht Silizium (5) wird eine Schicht oxidierbares Metall (6) abgeschieden. Over the layer of silicon (5) a oxidizable metal layer (6) is deposited. Anschliesend werden die Schicht Silizium (5) und die Schicht oxidierbares Metall (6) zu einer Schicht Siliziumoxid und Metalloxid (7) oxidiert. Subsequently, the silicon layer (5) and the oxidizable metal layer (6) to form a layer of silicon oxide and metal oxide (7) is oxidized.

Wilhelm Kegel

Papers

Method for increasing the capacitance in a storage trench

Method for increasing the capacitance in a storage trench and trench capacitor having increased capacitance

Increasing capacity in a storage trench comprises depositing a first silicon oxide layer in the trench, depositing a silicon layer over the first layer to sufficiently

Method of increasing the capacity of a DRAM trench capacitor