Ultrathin metal films and particles on oxide surfaces: structural, electronic and chemisorptive properties

This review presents an overview of the thermal properties of mesoscopic structures. The discussion is based on the concept of electron energy distribution, and, in particular, on controlling and probing it. The temperature of an electron gas is determined by this distribution: refrigeration is equivalent to narrowing it, and thermometry is probing its convolution with a function characterizing the measuring device. Temperature exists, strictly speaking, only in quasiequilibrium in which the distribution follows the Fermi-Dirac form. Interesting nonequilibrium deviations can occur due to slow relaxation rates of the electrons, e.g., among themselves or with lattice phonons. Observation and applications of nonequilibrium phenomena are also discussed. The focus in this paper is at low temperatures, primarily below $4\phantom{\rule{0.3em}{0ex}}\mathrm{K}$, where physical phenomena on mesoscopic scales and hybrid combinations of various types of materials, e.g., superconductors, normal metals, insulators, and doped semiconductors, open up a rich variety of device concepts. This review starts with an introduction to theoretical concepts and experimental results on thermal properties of mesoscopic structures. Then thermometry and refrigeration are examined with an emphasis on experiments. An immediate application of solid-state refrigeration and thermometry is in ultrasensitive radiation detection, which is discussed in depth. This review concludes with a summary of pertinent fabrication methods of presented devices.

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Opportunities for mesoscopics in thermometry and refrigeration: Physics and applications

This is the report of a DOE-sponsored workshop organized to discuss the status of our understanding of charge-transfer processes on the nanoscale and to identify research and other needs for progress in nanoscience and nanotechnology. The current status of basic electron-transfer research, both theoretical and experimental, is addressed, with emphasis on the distance-dependent measurements, and we have attempted to integrate terminology and notation of solution electron-transfer kinetics with that of conductance analysis. The interface between molecules or nanoparticles and bulk metals is examined, and new research tools that advance description and understanding of the interface are presented. The present state-of-the-art in molecular electronics efforts is summarized along with future research needs. Finally, novel strategies that exploit nanoscale architectures are presented for enhancing the efficiences of energy conversion based on photochemistry, catalysis, and electrocatalysis principles.

Charge Transfer on the Nanoscale: Current Status

Interaction of nanostructured metal overlayers with oxide surfaces

Considerable research and development means have been focused in the past decade on organic semiconductor thin films and devices with applications to full color displays, flexible electronics and photovoltaics. Critical areas of these thin films are their interfaces with electrodes, with other organic films and with dielectrics, as these interfaces control charge injection and transport through the device. Full understanding of the mechanisms that determine the electronic properties of these interfaces, i.e. the relative position of molecular levels and charge carrier transport states, is an important goal to reach for developing reliable device processing conditions. This report provides an extensive, although probably somewhat biased, review of polymer– and small molecule–metal interface work of the past few years, with emphasis placed specifically on (i) the electronic structure and molecular level alignment at these interfaces, (ii) the perceived differences between small molecule and polymer interfaces, (iii) the difference between organic-on-metal and metal-on-organic interfaces, and (iv) the role played by electrode surface contamination in establishing interface energetics. Environmental conditions, e.g. vacuum vs. ambient, are found to be critical parameters in the processing of polymer and small molecule interfaces with metals. With similar processing conditions, these two types of interfaces are found to obey very similar molecular level alignment rules.

Energetics of metal–organic interfaces: New experiments and assessment of the field

Almost all metal-semiconductor or Schottky contacts exhibit rectifying behaviour which is caused by a depletion layer on the semiconductor side of the interface. The electronic properties of a Schottky diode are characterised by its barrier height which is the energy difference between the top of the valence band of the semiconductor and the Fermi level at the interface. The physical mechanism primarily determining barrier height is provided by the decay of the metal's electron wavefunctions into the semiconductor in the energy range between the top of the valence band and the Fermi level where the metal conduction band overlaps the semiconductor band gap. These wavefunction tails are described as the continuum of metal-induced gap states (MIGS) which are derived from the virtual gap states of the complex semiconductor band structure.

https://iopscience.iop.org/article/10.1088/0034-4885/53/3/001/pdf

Winfried Monch

Papers

On the physics of metal-semiconductor interfaces