This paper describes the latest and most advanced surface-potential-based model jointly developed by The Pennsylvania State University and Philips. Specific topics include model structure, mobility and velocity saturation description, further development and verification of symmetric linearization method, recent advances in the computational techniques for the surface potential, modeling of gate tunneling current, inclusion of the retrograde impurity profile, and noise sources. The emphasis of this paper is on incorporating the recent advances in MOS device physics and modeling within the compact modeling context

PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit Simulation

This expanded and thoroughly revised edition of Thomas H. Lee's acclaimed guide to the design of gigahertz RF integrated circuits features a completely new chapter on the principles of wireless systems. The chapters on low-noise amplifiers, oscillators and phase noise have been significantly expanded as well. The chapter on architectures now contains several examples of complete chip designs that bring together all the various theoretical and practical elements involved in producing a prototype chip. First Edition Hb (1998): 0-521-63061-4 First Edition Pb (1998); 0-521-63922-0

The Design of CMOS Radio-Frequency Integrated Circuits: RF CIRCUITS THROUGH THE AGES

Two turn-key surface potential-based compact models are developed to simulate multigate transistors for integrated circuit (IC) designs. The BSIM-CMG (common-multigate) model is developed to simulate double-, triple-, and all-around-gate FinFETs and it is selected as the world's first industry-standard compact model for the FinFET. The BSIM-IMG (independent-multigate) model is developed for independent double-gate, ultrathin body (UTB) transistors, capturing the dynamic threshold voltage adjustment with back gate bias. Starting from long-channel devices, the basic models are first obtained using a Poisson-carrier transport approach. The basic models agree with the results of numerical two-dimensional device simulators. The real-device effects then augment the basic models. All the important real-device effects, such as short-channel effects (SCEs), quantum mechanical confinement effects, mobility degradation, and parasitics are included in the models. BSIM-CMG and BSIM-IMG have been validated with hardware silicon-based data from multiple technologies. The developed models also meet the stringent quality assurance tests expected of production level models.

BSIM—SPICE Models Enable FinFET and UTB IC Designs

This paper presents dc and ac tests that verify whether a MOSFET model is symmetric with respect to a source-drain reversal. The tests are valid in the presence of and also verify the symmetry of gate and bulk currents, and evaluate the symmetry of all components of MOSFET charge models

Validation of MOSFET model Source&#8211;Drain Symmetry

In this paper, a surface-potential-based (SP-based) model for AlGaN/GaN modulation-doped field-effect transistors (MODFETs) is built for the first time. First, a closed-form analytical approximation for the Fermi potential EF relative to the bottom of the conduction band at the AlGaN/GaN interface is presented and verified to be accurate enough under different biases and temperatures. Then, the potential of the bottom of the conduction band at the AlGaN/GaN interface φs is defined as the SP, and the value of φs relative to ground is calculated. The development of SP-based compact dc model is achieved based on this calculation. Velocity saturation, channel length modulation, drain-induced barrier lower effect, and self-heating effect are included in the presented model. Compared with the Vth-based model developed by our group, this SP-based model provides a symmetric and more accurate but simpler description for AlGaN/GaN MODFETs. The calculated dc characteristics and transconductance for devices with different lengths are in excellent agreement with the experimental data over the full range of applied gate and drain biases and under different temperatures.

A Surface-Potential-Based Compact Model for AlGaN/GaN MODFETs

This paper examines the relation between the structure of a compact MOSFET model and its ability to model harmonic distortion. It is found that non-singular behavior at zero drain bias is essential for qualitatively correct simulations of the third harmonic power dependence. Specifically, nonlinear distortion analysis requires that the Gummel symmetry condition be satisfied by the compact model. A simple procedure to enforce the Gummel symmetry without increasing the complexity of the model is incorporated in an advanced surface-potential-based MOSFET model to enable correct harmonic distortion modeling.

X. Gu

Papers

RF distortion analysis with compact MOSFET models