The optimization field suffers from the metaphor-based “pseudo-novel” or “fancy” optimizers. Most of these cliche methods mimic animals' searching trends and possess a small contribution to the optimization process itself. Most of these cliche methods suffer from the locally efficient performance, biased verification methods on easy problems, and high similarity between their components' interactions. This study attempts to go beyond the traps of metaphors and introduce a novel metaphor-free population-based optimization method based on the mathematical foundations and ideas of the Runge Kutta (RK) method widely well-known in mathematics. The proposed RUNge Kutta optimizer (RUN) was developed to deal with various types of optimization problems in the future. The RUN utilizes the logic of slope variations computed by the RK method as a promising and logical searching mechanism for global optimization. This search mechanism benefits from two active exploration and exploitation phases for exploring the promising regions in the feature space and constructive movement toward the global best solution. Furthermore, an enhanced solution quality (ESQ) mechanism is employed to avoid the local optimal solutions and increase convergence speed. The RUN algorithm's efficiency was evaluated by comparing with other metaheuristic algorithms in 50 mathematical test functions and four real-world engineering problems. The RUN provided very promising and competitive results, showing superior exploration and exploitation tendencies, fast convergence rate, and local optima avoidance. In optimizing the constrained engineering problems, the metaphor-free RUN demonstrated its suitable performance as well. The authors invite the community for extensive evaluations of this deep-rooted optimizer as a promising tool for real-world optimization. The source codes, supplementary materials, and guidance for the developed method will be publicly available at different hubs at http://imanahmadianfar.com and http://aliasgharheidari.com/RUN.html .

RUN beyond the metaphor: An efficient optimization algorithm based on Runge Kutta method

A sensor is a tool used to directly measure the test compound (analyte) in a sample. Ideally, such a device is capable of continuous and reversible response and should not damage the sample. Nanosensor refers to a system in which at least one of the nanostructures is used to detect gases, chemicals, biological agents, electric fields, light, heat, etc. in its construction. The use of nanomaterials significantly increases the sensitivity of the system. In biosensors, the part of the system used to attach to the analyte and specifically detect it is a biological element (such as a DNA strand, antibody, enzyme, whole cell). The “Nano Biosensors” series reviews various types of biosensors and biochips (including an array of biosensors), emphasizing the role of nanostructures, developed for medical and biological applications. Nano Biosensors Electrochemical sensors are sensors that use the biological element as a diagnostic component and the electrode as a transducer. The use of nanostructures in these systems is usually done to fill the gap between the converter and the bioreceptor, which is at the nanoscale. Given the nature of the biomaterial detection process, electrochemical biosensors are divided into catalytic and propulsion. Common electrochemical techniques common in sensors include potentiometric, chronometry, voltammetry, impedance measurement, and field effect transistor (FET). Simultaneous use of the advantages of nanostructures and electrochemical techniques has led to the emergence of sensors with high sensitivity and decomposition power. The use of nanostructures in these sensors is usually done to fill the gap between the converter and the bioreceptor, which is at the nanoscale. Various types of nanostructures including nanoparticles, nanotubes and nanowires, nanopores, self-adhesive monolayers and nanocomposites can be used to improve the performance and efficiency of sensors in their structure. Simultaneous use of the advantages of nanostructures and electrochemical techniques has led to the emergence of sensors with high sensitivity and decomposition power.

Nano Biosensors: Properties, applications and electrochemical techniques

Nanofluid heat transfer within a pipe equipped with external device

In this roadmap article, we have focused on the most recent advances in terahertz (THz) imaging with particular attention paid to the optimization and miniaturization of the THz imaging systems. Such systems entail enhanced functionality, reduced power consumption, and increased convenience, thus being geared toward the implementation of THz imaging systems in real operational conditions. The article will touch upon the advanced solid-state-based THz imaging systems, including room temperature THz sensors and arrays, as well as their on-chip integration with diffractive THz optical components. We will cover the current-state of compact room temperature THz emission sources, both optolectronic and electrically driven; particular emphasis is attributed to the beam-forming role in THz imaging, THz holography and spatial filtering, THz nano-imaging, and computational imaging. A number of advanced THz techniques, such as light-field THz imaging, homodyne spectroscopy, and phase sensitive spectrometry, THz modulated continuous wave imaging, room temperature THz frequency combs, and passive THz imaging, as well as the use of artificial intelligence in THz data processing and optics development, will be reviewed. This roadmap presents a structured snapshot of current advances in THz imaging as of 2021 and provides an opinion on contemporary scientific and technological challenges in this field, as well as extrapolations of possible further evolution in THz imaging.

Roadmap of Terahertz Imaging 2021.

Real-time COVID-19 diagnosis from X-Ray images using deep CNN and extreme learning machines stabilized by chimp optimization algorithm

Frequency multipliers and mixers based on Schottky barrier diodes (SBDs) are widely used in terahertz (THz) imaging applications. However, they still face obstacles, such as poor performance consistency caused by discrete flip-chip diodes, as well as low efficiency and large receiving noise temperature. It is very hard to meet the requirement of multiple channels in THz imaging array. In order to solve this problem, 12-μm-thick gallium arsenide (GaAs) monolithic integrated technology was adopted. In the process, the diode chip shared the same GaAs substrate with the transmission line, and the diode’s pads were seamlessly connected to the transmission line without using silver glue. A three-dimensional (3D) electromagnetic (EM) model of the diode chip was established in Ansys High Frequency Structure Simulator (HFSS) to accurately characterize the parasitic parameters. Based on the model, by quantitatively analyzing the influence of the surface channel width and the diode anode junction area on the best efficiency, the final parameters and dimensions of the diode were further optimized and determined. Finally, three 0.34 THz triplers and subharmonic mixers (SHMs) were manufactured, assembled, and measured for demonstration, all of which comprised a waveguide housing, a GaAs circuit integrated with diodes, and other external connectors. Experimental results show that all the triplers and SHMs had great performance consistency. Typically, when the input power was 100 mW, the output power of the THz tripler was greater than 1 mW in the frequency range of 324 GHz to 352 GHz, and a peak efficiency of 6.8% was achieved at 338 GHz. The THz SHM exhibited quite a low double sideband (DSB) noise temperature of 900~1500 K and a DSB conversion loss of 6.9~9 dB over the frequency range of 325~352 GHz. It is indicated that the GaAs monolithic integrated process, diodes modeling, and circuits simulation method in this paper provide an effective way to design THz frequency multiplier and mixer circuits.

Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array

In this paper, the development of two high power 220 GHz frequency triplers is proposed. The GaAs Schottky diodes with six nodes are applied to realize high efficiency 220 GHz tripler, while the application of GaN Schottky diodes with eight nodes is another attempt to improve power handling of the 220 GHz tripler. To reduce thermal effect of high power multipliers, the AlN substrates with high thermal conductivity are applied to provide better heat dissipation at the diode areas. A combination of electrical and thermal model of the Schottky diodes is established while the optimization of 220 GHz triplers are realized with 3D electromagnetic (EM) simulation and harmonic balanced simulation. Good agreement is achieved between the simulated results based on electro-thermal model and measured performances of the triplers. At room temperature, peak efficiency of the tripler based on GaAs Schottky diodes is 17.8%, while the maximum output of the tripler is 38.2 mW with 300 mW input power. As for the 220 GHz GaN Schottky diode tripler, measured results show that the maximum power handling is beyond 400 mW. The peak efficiency and maximum output are 4.7% and 18.4 mW, respectively. The proposed methods of developing high power multipliers can be applied in higher frequency band in the future.

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Development of High Power 220 GHz Frequency Triplers Based on Schottky Diodes

220 GHz wideband integrated receiver front end based on planar Schottky diodes

A wideband 220 GHz subharmonic mixer based on monolithic integration technology is proposed in this paper. It features 12 Mm-thick GaAs membrane with anti-parallel Schottky diodes working at THz band monolithically integrated on the membrane. The optimization principles of low-parastics Schottky diodes and the fabrication process of GaAs MMIC membrane diodes are elaborated. To realize optimum performances of the mixer, the dimensions of the integrated diodes and the matching network are optimized with harmonic balance simulation and load-pull techniques. An IF low pass filter with compact microstrip resonance cell (CMRC) configuration and an improved perpendicular coax-to-microstrip connection are used to realize wide IF band. The measured results show that the single sideband (SSB) conversion loss of this mixer is less than 10.5 dB from 185 to 255 GHz with fixed IF of 1 GHz, while the double sideband (DSB) noise temperature is better than 1400 K in this frequency range. Using fixed local oscillator (LO) frequency of 110 GHz, the measured SSB conversion loss is 7.4-10.7 dB within 185-255 GHz, indicating the good performances of the mixer with IF from DC to 35 GHz. The GaAs monolithic integration technology provides an approach for massive manufacturing of identical circuits and the proposed mixer with wideband characteristics will be applied in 220 GHz imaging systems in the near future.

Xiangyang Zhao

Papers

Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array

Development of High Power 220 GHz Frequency Triplers Based on Schottky Diodes

220 GHz wideband integrated receiver front end based on planar Schottky diodes

Development of a Wideband 220-GHz Subharmonic Mixer Based on GaAs Monolithic Integration Technology