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Xianzheng Zheng

Researcher at Shanghai University

Publications -  6
Citations -  166

Xianzheng Zheng is an academic researcher from Shanghai University. The author has contributed to research in topics: Surface plasmon resonance & Plasmon. The author has an hindex of 3, co-authored 6 publications receiving 140 citations.

Papers
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Journal ArticleDOI

Highly Reproducible and Sensitive SERS Substrates with Ag Inter-Nanoparticle Gaps of 5 nm Fabricated by Ultrathin Aluminum Mask Technique

TL;DR: The low value of RSD and the high EF of SERS signals indicate that the as-prepared substrate may be promising for highly sensitive and uniform SERS detection, and Finite-difference time-domain simulations suggest that the enhanced electric field originates from the narrow gap, which agrees well with the experimental results.
Journal ArticleDOI

Effective approach to strengthen plasmon resonance localized on top surfaces of Ag nanoparticles and application in surface-enhanced Raman spectroscopy.

TL;DR: This research provides a new way to improve the sensitivity of SERS, which indicates that great care has to be taken on special LSPR mode which is largely responsible for a certain plasmonic application (e.g., the DM for SERS although it is not the major mode).
Patent

Embedded type nano dot array surface enhanced Raman active substrate and preparation method thereof

TL;DR: In this paper, an aluminum sheet with an ordered concave pit array structure on the surface as a template and materials with SERS (Surface Enhanced Raman Scattering) performances are deposited to obtain a large area and highly-ordered nano dot array structure embedded into a groove on the concave Pit substrate.
Patent

A preparing method of an SERS active substrate having a 'hot spot' dimension of less than 5 nm based on a novel high- and low-temperature counterboring process with a step core drill

TL;DR: In this article, a high and low-temperature counterboring process with a step core drill was proposed to achieve a minimum hot spot dimension of less than 5 nm for an SERS active substrate.