An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Provided are a thin film transistor (TFT) including a selectively crystallized channel layer, and a method of manufacturing the TFT. The TFT includes a gate, the channel layer, a source, and a drain. The channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is crystallized. In the method of manufacturing the TFT, the channel layer is formed of an oxide semiconductor, and a metal component is injected into the channel layer so as to crystallize at least a portion of the channel layer contacting the source and the drain. The metal component can be injected into the channel layer by depositing and heat-treating a metal layer or by ion-implantation.

Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor

A laminated structure comprises a first layer comprising a crystal with six-fold symmetry, and a second layer comprising a metal oxynitride crystal formed on the first layer, wherein the second layer comprises at least one element selected from the group consisting of In, Ga, Si, Ge and Al, N, O and Zn, as main elements, and wherein the second layer has in-plane orientation.

Substrate for growing wurtzite type crystal and method for manufacturing the same and semiconductor device

A method of manufacturing a thin film transistor array panel is provided, the method includes: forming a gate line on an insulating substrate; forming a gate insulating layer; forming a semiconductor layer; forming a data conductive layer including a data line and a drain electrode; depositing a passivation layer; forming a photoresist including a first portion located on an end portion of the gate line, a second portion thicker than the first portion and located on the drain electrode, and a third portion thicker than the second portion; exposing a portion of the passivation layer under the second portion of the photoresist and a portion of the gate insulating layer under the first portion of the photoresist by etching using the photoresist as an etch mask; forming first and second contact holes exposing the drain electrode and the end portions of the gate line, respectively; and forming a pixel electrode connected to the drain electrode through the first contact hole.

Thin film transistor array panel and manufacturing method thereof

Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

Plasma activated conformal dielectric film deposition

PROBLEM TO BE SOLVED: To use a silicon nitride film, which can be formed by plasma enhanced chemical vapor deposition (PCVD), as a gate insulating film in a thin film transistor having a top gate structure and using an oxide semiconductor thin film mainly composed of zinc oxide ZnO While using the gate insulating film as a two-layer structure, by adjusting the nitrogen concentration and hydrogen concentration of each insulating film, the zinc oxide (ZnO) semiconductor thin film was protected from reduction and the generation of leakage current was suppressed And thin film transistors with high current drive capability A top gate type thin film transistor having a semiconductor thin film layer made of an oxide mainly composed of zinc oxide ZnO and a gate insulating film made of silicon nitride (SiNx), wherein the gate insulating film is the semiconductor thin film layer A first gate insulating film covering at least the upper surface of the first gate insulating film, and a second gate insulating film covering at least the side surfaces of the first gate insulating film and the semiconductor thin film, and the first gate insulating film and the second gate insulating film A thin film transistor, wherein the film is made of silicon nitride (SiNx) having a different composition [Selection] Figure 1

Thin-film transistor

PROBLEM TO BE SOLVED: To change an orientation of zinc oxide whereby an oxide semiconductor thin film layer excels in a heat resistance and surface smoothness, it is intended to suppress a leakage current and enhance a current drive capability, and a pixel electrode excels in a micro processability, thereby highly micronizing pixels. SOLUTION: A thin film transistor array has at least the oxide semiconductor thin film layer having zinc oxide as a main component, formed as a channel on a substrate, and the pixel electrode having zinc oxide as the main component. The orientation of zinc oxide of the oxide semiconductor thin film layer differs from that of the zinc oxide of the pixel electrode. COPYRIGHT: (C)2007,JPO&INPIT

Thin film transistor array and its manufacturing method

PROBLEM TO BE SOLVED: To provide a film-forming method, or the like for forming a film made of zinc oxide, or the like without damaging a substrate. SOLUTION: A DC voltage is applied to a set of targets A, B that are opposingly arranged in a film-forming chamber 124 while at least one of them is made of highly pure zinc for sputtering by plasma generated between both the targets A, B. Zn particles in the targets A, B being subjected to sputtering are allowed to react with oxygen gas, and are deposited on a substrate that is shifted from the axial direction of the opposingly target and is arranged for forming a ZnO film on the substrate surface. COPYRIGHT: (C)2006,JPO&NCIPI

Film-forming method, semiconductor film, and multilayer insulation film

PURPOSE:To form a tantalum thin film excellent in dielectric properties, e.g. withstand voltage, low leak current, by introducing a mixture gas of Ta based material gas and steam (H2O) into a vacuum tank and decomposing the material gas by applying energy externally. CONSTITUTION:A Ta-based material gas, e.g. Ta (OC2H5)5, is introduced, while being bubbled by an inert gas such as He subjected to flow control, into a vacuum tank 1 where a substrate 3 of Si, for example, is placed while being heated at 300 deg.C. Steam(H2O) is also introduced as an oxidizing gas so that plasma decomposition takes place to cause reaction in vapor phase thus forming a tantalum oxide thin film excellent in dielectric properties.

Formation of tantalum oxide thin film

PROBLEM TO BE SOLVED: To provide a zinc oxide semiconductor film of high mobility. SOLUTION: A DC voltage is applied to a set of targets A, B which are disposed facing each other in a film formation chamber 124 and at least one of which consists of zinc of high purity, and they are sputtered by plasma generated between both the targets A, B. Zn particles of the sputtered targets A, B is deposited on the substrate disposed shifted from an axial direction of the targets facing each other while being reacted with oxygen gas, and a ZnO film is formed on a surface of the substrate. COPYRIGHT: (C)2009,JPO&INPIT

孝平尾

Papers

Thin-film transistor

Thin film transistor array and its manufacturing method

Film-forming method, semiconductor film, and multilayer insulation film

Formation of tantalum oxide thin film

Zinc oxide semiconductor film

孝 平尾

Papers

Thin-film transistor

Thin film transistor array and its manufacturing method

Film-forming method, semiconductor film, and multilayer insulation film

Formation of tantalum oxide thin film

Zinc oxide semiconductor film

孝平尾