An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.

Semiconductor device, electronic device, and method of manufacturing semiconductor device

Provided are a thin film transistor (TFT) including a selectively crystallized channel layer, and a method of manufacturing the TFT. The TFT includes a gate, the channel layer, a source, and a drain. The channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is crystallized. In the method of manufacturing the TFT, the channel layer is formed of an oxide semiconductor, and a metal component is injected into the channel layer so as to crystallize at least a portion of the channel layer contacting the source and the drain. The metal component can be injected into the channel layer by depositing and heat-treating a metal layer or by ion-implantation.

Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor

A method for manufacturing a field-effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or deuterium is added; and, causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.

Field-effect transistor and method for manufacturing the same

A thin film transistor includes a substrate, and a pair of source/drain electrodes (i.e., a source electrode and a drain electrode) formed on the substrate and defining a gap therebetween. A pair of low resistance conductive thin films are provided such that each coats at least a part of one of the source/drain electrodes. The low resistance conductive thin films define a gap therebetween. An oxide semiconductor thin film layer is continuously formed on upper surfaces of the pair of low resistance conductive thin films and extends along the gap defined between the low resistance conductive thin films so as to function as a channel. Side surfaces of the oxide semiconductor thin film layer and corresponding side surfaces of the low resistance conductive thin films coincide with each other in a channel width direction of the channel.

Thin film transistor including low resistance conductive thin films and manufacturing method thereof

A thin film transistor includes a substrate (1, 11) , and a pair of source/drain electrodes (2, 14) (i.e. , a source electrode and a drain electrode) formed on the substrate and defining a gap therebetween. A pair of low resistance conductive thin films (10, 20) are provided such that each coats at least a part of one of the source/drain electrodes. The low resistance conductive thin films define a gap therebetween. An oxide semiconductor thin film layer (3, 15) is continuously formed on upper surfaces of the pair of low resistance conductive thin films and extends along the gap defined between the low resistance conductive thin films so as to function as a channel. Side surfaces of the oxide semiconductor thin film layer and corresponding side surfaces of the low resistance conductive thin films coincide with each other in a channel width direction of the channel.

Thin film transistor and manufacturing method thereof

PROBLEM TO BE SOLVED: To use a silicon nitride film, which can be formed by plasma enhanced chemical vapor deposition (PCVD), as a gate insulating film in a thin film transistor having a top gate structure and using an oxide semiconductor thin film mainly composed of zinc oxide ZnO While using the gate insulating film as a two-layer structure, by adjusting the nitrogen concentration and hydrogen concentration of each insulating film, the zinc oxide (ZnO) semiconductor thin film was protected from reduction and the generation of leakage current was suppressed And thin film transistors with high current drive capability A top gate type thin film transistor having a semiconductor thin film layer made of an oxide mainly composed of zinc oxide ZnO and a gate insulating film made of silicon nitride (SiNx), wherein the gate insulating film is the semiconductor thin film layer A first gate insulating film covering at least the upper surface of the first gate insulating film, and a second gate insulating film covering at least the side surfaces of the first gate insulating film and the semiconductor thin film, and the first gate insulating film and the second gate insulating film A thin film transistor, wherein the film is made of silicon nitride (SiNx) having a different composition [Selection] Figure 1

Thin-film transistor

A manufacturing method of a thin film transistor includes forming a pair of source/drain electrodes on a substrate, such that the source/drain electrodes define a gap therebetween; forming low resistance conductive thin films, which define a gap therebetween, on the source/drain electrodes; and forming an oxide semiconductor thin film layer on upper surface of the low resistance conductive thin films and in the gap defined between the low resistance conductive thin films so that the oxide semiconductor thin film layer functions as a channel. The low resistance conductive thin films and the oxide semiconductor thin film layer are etched so that side surfaces of the resistance conductive thin films and corresponding side surfaces of the oxide semiconductor thin film layer coincide with each other in a channel width direction of the channel. A gate electrode is mounted over the oxide semiconductor thin film layer.

Manufacturing method of thin film transistor including low resistance conductive thin films

PROBLEM TO BE SOLVED: To change an orientation of zinc oxide whereby an oxide semiconductor thin film layer excels in a heat resistance and surface smoothness, it is intended to suppress a leakage current and enhance a current drive capability, and a pixel electrode excels in a micro processability, thereby highly micronizing pixels. SOLUTION: A thin film transistor array has at least the oxide semiconductor thin film layer having zinc oxide as a main component, formed as a channel on a substrate, and the pixel electrode having zinc oxide as the main component. The orientation of zinc oxide of the oxide semiconductor thin film layer differs from that of the zinc oxide of the pixel electrode. COPYRIGHT: (C)2007,JPO&INPIT

Hiroshi Furuta

Papers

Thin film transistor including low resistance conductive thin films and manufacturing method thereof

Thin film transistor and manufacturing method thereof

Thin-film transistor

Manufacturing method of thin film transistor including low resistance conductive thin films

Thin film transistor array and its manufacturing method