Iron oxide surfaces

Nanoscale multilayered TiN/SiC films are of great importance in many electronic and industrial fields. The careful control over the structure of the laminates, nanocrystalline or amorphous, is crucial for their further applicability and study. However, several limitations in their fabrication have revealed important gaps in the understanding of this system. Here, we study influence of temperature on the physico-chemical and functional properties of TiN/SiC multilayers. We will show the clear increment on hardness of the samples, while the nanocomposite structure of the layers is maintained with no increment in crystal size. We will investigate the interstitial effects and rearrangements, between the TiN/SiC phases and their role in the enhanced mechanical response. Our experiments will clearly show a change in the modulation period of the samples, pointing to interfacial reactions, diffusion of ions or crystallization of new phases. Full Investigations of the film properties were carried out using several methods of analysis: XRD, XPS, FTIR, HR-TEM and SIMS Additionally, results were combined with First Principles MD computations of TiN/SiC heterostructures.

Experimental and theoretical studies of the physicochemical and mechanical properties of multi-layered TiN/SiC films: Temperature effects on the nanocomposite structure

Adsorption and diffusion of oxygen on metal surfaces studied by first-principle study: A review

https://www.research.manchester.ac.uk/portal/files/69918127/SUSC_2018_77_Original_V0_1.pdf

The surface energy and stress of metals

Catalytic growth of diamond-like carbon on Fe3C-containing carburized layer through a single-step plasma-assisted carburizing process

First-principles study of oxygen adsorption on Fe(1 1 0) surface

Influence of radiofrequency power on compositional, structural and optical properties of amorphous silicon carbonitride films

Structural and optical properties of the SiCN thin films prepared by reactive magnetron sputtering

Silicon oxycarbide (SiCO) thin films were prepared by the RF reactive sputtering technique on n-type silicon substrates with the target of sintered silicon carbide (SiC), and high purity oxygen was used as the reactant gas. The as-deposited films were annealed at temperatures of 600°C, 800°C, and 1000°C under nitrogen ambient, respectively. The films were characterized by scanning electron microscopy, Fourier transform infrared spectroscopy, X-ray diffraction and photoluminescence (PL) spectrophotometer. The results show that annealing temperature plays an important role in the structure and photoluminescence of the films. The temperature 600°C is the most favorable annealing temperature for SiO2 crystallization and the formation of 6H-SiC crystal phase in the SiCO films. The intense PL peaks located at 375 nm and 470 nm are observed at room temperature. The origin of the PL was discussed.

Xiaochao Tan

Papers

First-principles study of oxygen adsorption on Fe(1 1 0) surface

Influence of radiofrequency power on compositional, structural and optical properties of amorphous silicon carbonitride films

Structural and optical properties of the SiCN thin films prepared by reactive magnetron sputtering

Structure and photoluminescence properties of silicon oxycarbide thin films deposited by the rf reactive sputtering

Effect of annealing temperature and composition on photoluminescence properties of magnetron sputtered SiCN films