Journal ArticleDOI
Influence of radiofrequency power on compositional, structural and optical properties of amorphous silicon carbonitride films
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TLDR
In this paper, the influence of RF power on the compositional, morphological, structural and optical properties of silicon carbonitride (SiCN) films was investigated by the radiofrequency (RF) reactive magnetron sputtering of polycrystalline silicon target under mixed reactive gases of acetylene and nitrogen.About:
This article is published in Applied Surface Science.The article was published on 2010-01-15. It has received 22 citations till now. The article focuses on the topics: Amorphous solid & Amorphous silicon.read more
Citations
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Journal ArticleDOI
Remote Hydrogen Microwave Plasma Chemical Vapor Deposition of Amorphous Silicon Carbonitride (a‐SiCN) Coatings Derived From Tris(dimethylamino)Silane
Book ChapterDOI
Compilation on Synthesis, Characterization and Properties of Silicon and Boron Carbonitride Films
TL;DR: In this paper, the authors proposed a ternary boron carbonitride (BCxNy) method for the synthesis of silicon carbonitrides, which can potentially be used in wear and corrosion protection, high-temperature oxidation resistance, as a good moisture barrier for high temperature industrial as well as strategic applications.
Dissertation
Apport de l'excitation microonde ECR à la pulvérisation réactive pour le dépôt de couches minces SiCxNy˸H, étude des propriétés optiques et électriques
TL;DR: In this article, the authors describe the use of a plasma microonde ECR with a pulverisation reactive magnetron for the storage of couches minces SiCxNy:H, a partir d'une cible de silicium and un melange de gaz forme d'Ar, CH4 and N2.
Journal ArticleDOI
Effects of rf power on chemical composition and surface roughness of glow discharge polymer films
TL;DR: In this paper, the growth mechanism of defects in glow discharge polymer (GDP) films was studied, and the results showed that, at low rf power, there is a larger probability for secondary polymerization and formation of multi-carbon C-H species in the plasma.
Journal ArticleDOI
Structural and optical properties of the SiCN thin films prepared by reactive magnetron sputtering
TL;DR: In this paper, the properties of silicon carbonitride (SiCN) thin films were characterized by scanning electron microscope with an energy dispersive spectrometer, X-ray diffraction, Fourier transform infrared spectroscopy, Xray photoelectron spectrometry and ultraviolet-visible spectrophotometer.
References
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Journal ArticleDOI
A review of the preparation of carbon nitride films
Stephen Muhl,Juan Manuel Mendez +1 more
TL;DR: A review of the methods used, and the results obtained, by a variety of groups in their attempts to prepare carbon nitride films is presented in this paper, with a somewhat speculative set of conclusions.
Journal ArticleDOI
On the influence of bandstructure on transport properties of magnetic tunnel junctions with Co2Mn1−xFexSi single and multilayer electrode
Jan-Michael Schmalhorst,Daniel Ebke,Alexander Weddemann,Andreas Hütten,Andy Thomas,Günter Reiss,Andrey Turchanin,Armin Gölzhäuser,Benjamin Balke,Claudia Felser +9 more
Abstract: The transport properties of magnetic tunnel junctions with different (110)-textured Heusler alloy electrodes such as Co2MnSi, Co2FeSi or Co2Mn0.5Fe0.5Si, AlOx barrier, and Co–Fe counterelectrode are investigated. The bandstructure of Co2Mn1−xFexSi is predicted to show a systematic shift in the position of the Fermi energy EF through the gap in the minority density of states while the composition changes from Co2MnSi toward Co2FeSi. Although this shift is indirectly observed by x-ray photoemission spectroscopy, all junctions show a large spin polarization of around 70% at the Heusler alloy/Al–O interface and are characterized by a very similar temperature and bias voltage dependence of the tunnel magnetoresistance. This suggests that these transport properties of these junctions are dominated by inelastic excitations and not by the electronic bandstructure.
Journal ArticleDOI
Crystalline silicon carbon nitride: a wide band gap semiconductor
L. C. Chen,C. K. Chen,S. L. Wei,D. M. Bhusari,Kuei-Hsien Chen,Yang-Fang Chen,Y. C. Jong,Ying-Sheng Huang +7 more
TL;DR: In this paper, the authors determined the direct band gap of the new SiCN to be around 3.8 eV at room temperature and showed that the SiCN compounds have a near band edge emission center.
Journal ArticleDOI
The affinity of Si-N and Si-C bonding in amorphous silicon carbon nitride (a-SiCN) thin film
TL;DR: In this paper, the bonding sensitivities of Si-N and Si-C bonds in the a-SiCN thin films were investigated experimentally and theoretically, and it was found that a sharp phase transition from the predominantly Si−C bonded structure to the Si−N bonded structure occurs during the deposition of SiCN thin film without and with N incorporation.
Journal ArticleDOI
Structural analysis and microstructural observation of SiCxNy films prepared by reactive sputtering of SiC in N2 and Ar
TL;DR: In this article, the amorphous silicon carbonitride (SiC x N y ) films were prepared by radio frequency (RF) magnetron reactive sputtering using sintered SiC target.