Showing papers by "Xiaohua Ma published in 2010"
TL;DR: In this article, a SiN-passivated AlGaN/GaN high electron mobility transistors were investigated by 1MeV neutron irradiation at fluences up to 1015 cm-2, yielding a significant degradation for the transconductance near the knee voltage and the reverse gate leakage current.
Abstract: The SiN-passivated AlGaN/GaN high electron mobility transistors were investigated by 1MeV neutron irradiation at fluences up to 1015 cm-2, yielding a significant degradation for the transconductance near the knee voltage and the reverse gate leakage current at fluences ranging from 1014 to 1015 cm-2 which could be attributed to the irradiation induced mobility shift and the defects in SiN passivation layers respectively since no any recovery was found after 20 hour annealing at room temperature. Meanwhile the negligible degradation of the saturation drain current, the maximal transconductance and the threshold voltage gave the fact that the effectiveness of SiN layers in passivated surface states in the source-gate spacer and gate-drain spacer was undiminished by neutron irradiation. Moreover the ohmic contact was robustness to neutron since the sheet resistance of ohmic contact region hardly shifted, but the schottky characteristics degraded obviously. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
3 citations
13 Dec 2010
TL;DR: In this article, the reverse generation current under high gate voltage stress condition in LDD MOSFET has been studied and it is found that the generation current peak decreases as the stress time increases.
Abstract: The reverse generation current under high gate voltage stress condition in LDD MOSFET has been studied. It is found that the generation current peak decreases as the stress time increases. It ascribes to the dominating oxide trapped electrons in n-MOSFET and trapped holes in p-MOSFET which reduce the effective drain bias so that lowering the maximal generation rate. The density of the effective trapped electrons in n-MOSFET and holes in p-MOSFET affecting the effective drain bias are calculated by using our model.
13 Dec 2010
TL;DR: In this paper, an improved NBTI model with the consideration of moving diffusion front in oxide and poly-Si layer is proposed, and the dependence of degradation on channel length and width is taken into account simultaneously for the first time.
Abstract: Based on the Reaction-Diffusion framework, an improved NBTI model is proposed with the consideration of moving diffusion front in oxide and poly-Si layer. The dependence of degradation on channel length and width is taken into account simultaneously for the first time. The model is implemented with Verilog-A to be compatible with commercial simulators and verified by experimental data.