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Xiaowei Li
Researcher at University of Texas at Austin
Publications - 37
Citations - 1314
Xiaowei Li is an academic researcher from University of Texas at Austin. The author has contributed to research in topics: Photodiode & Avalanche photodiode. The author has an hindex of 21, co-authored 37 publications receiving 1227 citations.
Papers
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Journal ArticleDOI
Recent advances in avalanche photodiodes
Joe C. Campbell,S. Demiguel,Feng Ma,Ariane L. Beck,Xiangyi Guo,Shuling Wang,Xiaoguang Zheng,Xiaowei Li,Jeffrey D. Beck,Michael A. Kinch,A. Huntington,Larry A. Coldren,Jean Decobert,N. Tscherptner +13 more
TL;DR: A review of the recent progress in APD technology can be found in this paper, where the authors present a survey of the most recent developments in III-V compound avalanche photodiodes (APDs).
Journal ArticleDOI
High-saturation-current charge-compensated InGaAs-InP uni-traveling-carrier photodiode
Ning Li,Xiaowei Li,S. Demiguel,Xiaoguang Zheng,Joe C. Campbell,D.A. Tulchinsky,Keith J. Williams,T. Isshiki,Geoffrey S. Kinsey,R. Sudharsansan +9 more
TL;DR: In this paper, charge compensation is utilized in an InGaAs-InP uni-traveling-carrier photodiode to mitigate the space-charge effect, which achieves a bandwidth of 25 GHz and large-signal 1-dB compression current greater than 90 mA.
Journal ArticleDOI
Very high-responsivity evanescently coupled photodiodes integrating a short planar multimode waveguide for high-speed applications
S. Demiguel,Ning Li,Xiaowei Li,Xiaoguang Zheng,Jooyong Kim,Joe C. Campbell,Hanfei Lu,A. Anselm +7 more
TL;DR: In this paper, an evanescently coupled photodiode that utilizes a short planar multimode waveguide was reported with very high responsivity with polarization dependence less than 0.5 dB, 48 GHz bandwidth, and 11-mA saturation current.
Journal ArticleDOI
High-saturation current wide-bandwidth photodetectors
TL;DR: In this article, the authors describe the design and performance of two widebandwidth photodiode structures, which achieve saturation currents (bandwidths) of >430mA (300 MHz) and 199 mA (1 GHz) for 100-spl mu/m/sup 2/ area devices.
Journal ArticleDOI
High-saturation-current InP-InGaAs photodiode with partially depleted absorber
Xiaowei Li,Ning Li,Xiaoguang Zheng,S. Demiguel,Joe C. Campbell,D.A. Tulchinsky,Keith J. Williams +6 more
TL;DR: In this paper, a high-saturation-current InGaAs photodiode (PD) with a partially depleted absorber is demonstrated, achieving optical responsivity of 0.58 A/W and over 1.1 W of dissipated electrical power.