www.MaterialsViews.com C O M Graphene-On-Silicon Schottky Junction Solar Cells M U N I By Xinming Li , Hongwei Zhu , * Kunlin Wang , * Anyuan Cao , Jinquan Wei , Chunyan Li , Yi Jia , Zhen Li , Xiao Li , and Dehai Wu C A IO N Graphene, a single atomic layer of carbon hexagons, has stimulated a lot of research interest owing to its unique structure and fascinating properties. [ 1 ] Graphene has been produced in the form of ultrathin sheets consisting of one or a few atomic layers by chemical vapor deposition (CVD) [ 2–4 ] or solution processing [ 5 , 6 ] and can be transferred to various substrates. The two-dimensionality and structural fl atness make graphene sheets ideal candidates for thin-fi lm devices and combination with other semiconductor materials such as silicon. These fi lms typically show sheet resistances on the order of several hundred ohm per square at about 80% optical transparency. [ 7 ] With modifi cation on the electronic properties and improvement of processing techniques, graphene fi lms show potential for use in conductive, fl exible electrodes, as an alternative for indium tin oxide (ITO). Graphene applications are just starting, and current investigations are on a number of areas such as fi llers for composites, nanoelectronics, and transparent electrodes. [ 8 ] For applications related to solar cells, graphene microsheets were dispersed into conjugated polymers to improve exciton dissociation and charge transport. [ 9–11 ] Also, solution-processed thin fi lms were used as conductive and transparent electrodes for organic [ 12 ] and dyesensitized [ 13 ] solar cells, although the cell effi ciency is still lower than those with ITO and fl uorine tin oxide (FTO) electrodes. Compared with carbon nanotube fi lms that have been extensively studied, graphene fi lms may have several advantages. A continuous single-layer graphene fi lm could retain high conductivity at very low (atomic) thickness, and avoid contact resistance that occurs in a carbon nanotube fi lm between interconnected nanotube bundles. In addition, graphene fi lms have minimum porosity and, in small areas, can provide an extremely fl at surface for molecule assembly and device integration. There are many opportunities in utilizing distinct properties of graphene and exploring novel applications. Bulk heterojunction structures based on carbon materials have attracted a great deal of interest for both scientifi c fundamentals and potential applications in various new optoelectronic devices,

Graphene‐On‐Silicon Schottky Junction Solar Cells

In the past decade graphene has been one of the most studied material for several unique and excellent properties. Due to its two dimensional nature, physical and chemical properties and ease of manipulation, graphene offers the possibility of integration with the exiting semiconductor technology for next-generation electronic and sensing devices. In this context, the understanding of the graphene/semiconductor interface is of great importance since it can constitute a versatile standalone device as well as the building-block of more advanced electronic systems. Since graphene was brought to the attention of the scientific community in 2004, the device research has been focused on the more complex graphene transistors, while the graphene/semiconductor junction, despite its importance, has started to be the subject of systematic investigation only recently. As a result, a thorough understanding of the physics and the potentialities of this device is still missing. The studies of the past few years have demonstrated that graphene can form junctions with 3D or 2D semiconducting materials which have rectifying characteristics and behave as excellent Schottky diodes. The main novelty of these devices is the tunable Schottky barrier height, a feature which makes the graphene/semiconductor junction a great platform for the study of interface transport mechanisms as well as for applications in photo-detection, high-speed communications, solar cells, chemical and biological sensing, etc. In this paper, we review the state-of-the art of the research on graphene/semiconductor junctions, the attempts towards a modeling and the most promising applications.

Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction

Applications of carbon materials in photovoltaic solar cells

Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction

Graphene and two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted significant interest due to their unique properties that cannot be obtained in their bulk counterparts. These atomically thin 2D materials have demonstrated strong light–matter interactions, tunable optical bandgap structures and unique structural and electrical properties, rendering possible the high conversion efficiency of solar energy with a minimal amount of active absorber material. The isolated 2D monolayer can be stacked into arbitrary van der Waals (vdWs) heterostructures without the need to consider lattice matching. Several combinations of 2D/3D and 2D/2D materials have been assembled to create vdWs heterojunctions for photovoltaic (PV) and photoelectrochemical (PEC) energy conversion. However, the complex, less-constrained, and more environmentally vulnerable interface in a vdWs heterojunction is different from that of a conventional, epitaxially grown heterojunction, engendering new challenges for surface and interface engineering. In this review, the physics of band alignment, the chemistry of surface modification and the behavior of photoexcited charge transfer at the interface during PV and PEC processes will be discussed. We will present a survey of the recent progress and challenges of 2D/3D and 2D/2D vdWs heterojunctions, with emphasis on their applicability to PV and PEC devices. Finally, we will discuss emerging issues yet to be explored for 2D materials to achieve high solar energy conversion efficiency and possible strategies to improve their performance.

Engineering graphene and TMDs based van der Waals heterostructures for photovoltaic and photoelectrochemical solar energy conversion

A photovoltaic cell with carbonaceous thin film/n‐type silicon (C/n‐Si) was fabricated. The carbonaceous thin film was deposited on an n‐type single‐crystal‐silicon substrate by chemical‐vapor deposition of 2,5‐dimethyl‐p‐benzoquinone at 500 °C. Without light irradiation, the photovoltaic cell displayed an almost perfect rectifying current–voltage characteristic. Under illumination of 15 mW cm−2 light with wavelengths between 400 and 800 nm similar to the solar light, it generated 2.73 mA cm−2 of short‐circuit and 325 mV of open‐circuit voltage. With the same light condition, a power conversion efficiency of 3.80% and a fill factor value of 0.65 were achieved.

Y. Kaneko

Papers

Photovoltaic cell of carbonaceous film/n‐type silicon