Optimization for offset and kickback-noise in novel CMOS double-tail dynamic comparator: A low-power, high-speed design approach using bulk-driven load

Systems that rely on energy harvested from ambient sources are gaining increased attention due to their possible usage in low-power applications. Owing to the unreliable nature of such ambient energy sources, these systems suffer from supply voltage degradation and power interruptions. Therefore, the computational scheme for such energy-harvesting systems is divided into small incremental steps along with nonvolatile memory elements that conserve the data between subsequent power interruptions. Toward that end, we propose a new nonvolatile flip-flop (NVFF) that exhibits better energy efficiency and denser area compared to previous designs. The NVFF utilizes a single spin Hall effect-based magnetic tunnel junction (SHE-MTJ) because of its favorable device characteristics, like high spin injection efficiency and decoupled read-write paths. We also propose a new restore mechanism, wherein a CMOS inverter is used as a gain element to attain reliable restore operation with single SHE-MTJ per NVFF. A detailed device-circuit simulation, including variational analysis, proves the reliability of the proposed NVFF.

Area-Efficient Nonvolatile Flip-Flop Based on Spin Hall Effect

A new design technique is proposed and discussed for the design of active load using the bulk-driven method. The proposed method uses gate-driven input drivers with bulk-driven MOS load. Further, i...

Enhanced Gain Low-Power CMOS Amplifiers: A Novel Design Approach Using Bulk-Driven Load and Introduction to GACOBA Technique

Spin transfer torque (STT)-based switching of magnetic random access memories (MRAMs) has stimulated considerable research interest in recent years. The nonvolatility of STT-MRAMs, high areal density, and low static power dissipation makes them a strong contender for possible replacement of conventional silicon-based memories. However, a major bottleneck associated with STT-MRAMs is their high write current requirement. Recently, it has been demonstrated that the high write current of the STT switching mechanism can be improved by using other magnetic switching techniques like voltage-controlled magnetic anisotropy, spin Hall effect, and magnetoelectric effect. Interestingly, each of these new physics increases the design space to be explored and presents interesting tradeoffs with respect to read and write mechanisms. It is, therefore, important to analyze these devices with respect to their readability, writability, and areal density in a unified framework that is based on the state-of-the-art experimental results. Toward that end, in this paper, we present an overview of various physics underlying these magnetic memories and discuss associated bit-cell circuitry. Furthermore, we present a holistic comparative analysis based on detailed numerical simulations highlighting the various design tradeoffs.

Design and Comparative Analysis of Spintronic Memories Based on Current and Voltage Driven Switching

Performance optimization of 1T-1C DRAMs

A new boost bulk-driven sense-amplifier-based flip-flop (BBDSAFF) is presented. First, thanks to the boost and bulk-driven technique, the BBDSAFF consumes much lower power and can operate normally in the ultra-wide voltage range. Secondly, the adopted pseudo-PMOS dynamic technique in the RS latch output stage can greatly reduce the delay and improve the driving capability. The simulation results show advantages of high-speed, low power dissipation and very small and symmetrical rise/fall delay. Under the same simulation conditions, power dissipation, delay and PDP of the Strollo sense-amplifier-based flip-flop is 31 μW, 107 ps and 3.32 fJ whereas that of the proposed bulk-driven SAFF is 29 μW, 94 ps and 2.73 fJ. This low power consumption and high-speed BBDSAFF can be applied in various fields, such as ultra-dynamic voltage scaling VLSI, circuits, low power dissipation counter-clock systems and microprocessors.

https://ietresearch.onlinelibrary.wiley.com/doi/pdf/10.1049/el.2014.3845

Yanyan Mo

Papers

Boost bulk-driven sense-amplifier flip-flop operating in ultra-wide voltage range