Showing papers by "Yihwan Kim published in 2010"

High performance germanium n-MOSFET with antimony dopant activation beyond 1×10 20 cm −3

Abstract: For the first time, high performance Ge nMOSFET is fabricated using laser annealing of ion-implanted antimony (Sb) dopants which provides donor activation beyond 1×1020cm−3 in germanium. Record I on /I off > 105 is demonstrated for n+/p junctions combined with significant reduction of contact resistance to 7×10−7 Ω-cm2. Performance projections for ITRS HP 22nm technology node are also discussed.

Methods of selectively depositing an epitaxial layer

Abstract: Methods for selectively depositing an epitaxial layer are provided herein. In some embodiments, providing a substrate having a monocrystalline first surface and a non-monocrystalline second surface; exposing the substrate to a deposition gas to deposit a layer on the first and second surfaces, the layer comprising a first portion deposited on the first surfaces and a second portion deposited on the second surfaces; and exposing the substrate to an etching gas comprising a first gas comprising hydrogen and a halogen and a second gas comprising at least one of a Group III, IV, or V element to selectively etch the first portion of the layer at a slower rate than the second portion of the layer. In some embodiments, the etching gas comprises hydrogen chloride (HCl) and germane (GeH4).

Ultra shallow junctions with high dopant activation and GeO 2 interfacial layer for gate dielectric in germanium MOSFETs

Abstract: For the first time, ultra shallow junctions (x j 1×1020 cm−3) is achieved for all dopant atoms (P/As/Sb/B) using Laser Thermal Processing. We also show ultrathin (0.6nm), high quality GeO 2 interfacial layer for gate dielectric, which provides substrate orientation independent D it and mobility enhancement for Ge high-k N/P MOSFETs.