Y
Yihwan Kim
Researcher at Applied Materials
Publications - 52
Citations - 1903
Yihwan Kim is an academic researcher from Applied Materials. The author has contributed to research in topics: Layer (electronics) & Silicon. The author has an hindex of 20, co-authored 52 publications receiving 1863 citations.
Papers
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Patent
Methods to fabricate MOSFET devices using a selective deposition process
TL;DR: In this paper, a substrate is exposed to at least two different process gases to deposit one layer on top of another layer, and the next process gas contains silane and an etchant.
Patent
Selective Formation of Silicon Carbon Epitaxial Layer
TL;DR: In this article, methods for the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices, are disclosed.
Patent
Phosphorus containing si epitaxial layers in n-type source/drain junctions
TL;DR: In this paper, the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices, was discussed.
Patent
METHODS OF SELECTIVE DEPOSITION OF HEAVILY DOPED EPITAXIAL SiGe
Yihwan Kim,Arkadii V. Samoilov +1 more
TL;DR: In this paper, a method for depositing a silicon film or silicon germanium film on a substrate is provided, which includes placing the substrate within a process chamber and heating the substrate surface to a temperature in the range from about 600 C to about 900 C while maintaining a pressure in the process chamber in the ranges from about 13 Pa (0.1 Torr) to about 27 kPa (200 Torr).
Patent
Selective epitaxy process with alternating gas supply
Yihwan Kim,Arkadii V. Samoilov +1 more
TL;DR: In this paper, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber, where the substrate is exposed to a deposition gas to deposit an epitaxial layer on the monocrystalline surface and a polycrystalline layer on a second surface.