Patent
METHODS OF SELECTIVE DEPOSITION OF HEAVILY DOPED EPITAXIAL SiGe
Yihwan Kim,Arkadii V. Samoilov +1 more
TLDR
In this paper, a method for depositing a silicon film or silicon germanium film on a substrate is provided, which includes placing the substrate within a process chamber and heating the substrate surface to a temperature in the range from about 600 C to about 900 C while maintaining a pressure in the process chamber in the ranges from about 13 Pa (0.1 Torr) to about 27 kPa (200 Torr).Abstract:
In one embodiment a method for depositing a silicon film or silicon germanium film on a substrate is provided which includes placing the substrate within a process chamber and heating the substrate surface to a temperature in the range from about 600 C to about 900 C while maintaining a pressure in the process chamber in the range from about 13 Pa (0.1 Torr) to about 27 kPa (200 Torr). A deposition gas is provided to the process chamber and includes SiH4, an optional germanium source gas, an etchant, a carrier gas and optionally at least one dopant gas. The silicon film or the silicon germanium film is selectively and epitaxially grown on the substrate. One embodiment includes a method for depositing a silicon-containing film with an inert gas as the carrier gas. Methods also include the fabrication of electronic devices utilizing selective silicon germanium epitaxial films.read more
Citations
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Substrate Processing Apparatus
TL;DR: In this article, a bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the booster pump to prevent the exhaust gas from diffusing back to the inside of a process chamber.
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References
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Patent
Sequential chemical vapor deposition
TL;DR: In this article, the authors proposed a method for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve.
Journal ArticleDOI
Surface Chemistry for Atomic Layer Growth
TL;DR: In this article, the basic concepts of atomic layer growth using molecular precursors and binary reaction sequence chemistry are reviewed and the characteristics of film deposition using ALP are explored using recent examples for Al2O3 ALP.
Patent
Radical-assisted sequential CVD
TL;DR: In this article, a new method for CVD deposition on a substrate is taught wherein radical species are used in alternate steps to depositions from a molecular precursor to treat the material deposited from the molecular precursor and to prepare the substrate surface with a reactive chemical in preparation for the next molecular precursor step.
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Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources
Mikko Ritala,Kaupo Kukli,Antti Rahtu,Petri Räisänen,Markku Leskelä,Timo Sajavaara,Juhani Keinonen +6 more
TL;DR: This finding adds to the other benefits of the ALD method, especially the atomic-level thickness control and excellent uniformity, and takes a major step toward the scientifically challenging and technologically important task of replacing silica as the gate dielectric in the future generations of metal oxide semiconductor field effect transistors.
Patent
Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
TL;DR: In this article, a method of forming a metal layer having excellent thermal and oxidation resistant characteristics using atomic layer deposition is provided, where the metal layer includes a reactive metal (A), an element (B) for the amorphous combination between the reactive metal and nitrogen (N), and nitrogen(N).